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TN2460TT1

Description
Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA, TO-236, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size74KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

TN2460TT1 Overview

Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA, TO-236, 3 PIN

TN2460TT1 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT-346
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.051 A
Maximum drain-source on-resistance60 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-236AA
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
TN2460L/TN2460T
Vishay Siliconix
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TN2460L
240
TN2460T
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
60 @ V
GS
= 10 V
60 @ V
GS
= 10 V
V
GS(th)
(V)
0.5 to 1.8
0.5 to 1.8
I
D
Min (mA)
75
51
FEATURES
D
D
D
D
D
Low On-Resistance: 40
W
Secondary Breakdown Free: 260 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
TO-236
(SOT-23)
Device Marking
Front View
“S” TN
2406L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
1
3
S
2
D
Marking Code: T2wll
T2 = Part Number Code for TN2460T
w
= Week Code
ll
= Lot Traceability
G
2
D
3
Top View
TN2460L
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70205
S-04279—Rev. D , 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN2460L
240
"20
75
48
800
0.8
0.32
156
–55 to 150
TN2460T
240
"20
51
32
400
0.36
0.14
350
Unit
V
mA
W
_C/W
_C
11-1

TN2460TT1 Related Products

TN2460TT1 TN2460T-T1-E3 TN2460T-E3
Description Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA, TO-236, 3 PIN Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
Parts packaging code SOT-346 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 240 V 240 V 240 V
Maximum drain current (ID) 0.051 A 0.051 A 0.051 A
Maximum drain-source on-resistance 60 Ω 60 Ω 60 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF 10 pF 10 pF
JEDEC-95 code TO-236AA TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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