Data Sheet
BCR3AS-12A
600V - 3A - Triac
Low Power Use
Features
•
I
T (RMS)
: 3 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
: 15 mA
R07DS1438EJ0500
(Previous: REJ03G0288-0400)
Rev.5.00
May. 10, 2019
•
Tj: 125 °C
•
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
4
2, 4
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
12
3
1
12
3
3
Application
Small motor control, heater control, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
Ratings
3
30
3.7
3
0.3
6
0.3
–40
to +125
–40
to +125
Unit
A
A
A
2
s
W
W
V
A
C
C
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 108C
Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS1438EJ0500 Rev.5.00
May. 10, 2019
Page 1 of 7
BCR3AS-12A
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note4
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
15
15
15
—
3.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 4.5 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T
2
tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c =
–
1.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
V
D
R07DS1438EJ0500 Rev.5.00
May. 10, 2019
Page 2 of 7
BCR3AS-12A
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
2
Tj = 25°C
40
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
30
10
1
20
10
0
10
10
-1
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
o
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
10
1
V
GM
= 6V
V
GT
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Voltage (V)
P
G(AV)
= 0.3W
I
FGT I
I
RGT I
I
RGT III
I
GM
=
0.3A
V
GD
= 0.2V
I
RGT III
10
2
I
RGT I
, I
FGT I
10
0
10
-1
10
0
10
1
10
2
10
3
10
1
- 40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
Typical Example
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
10
3
I
RGT III
I
RGT I
I
FGT I
10
2
Typical Example
10
2
10
1
- 40
0
40
80
120
160
10
1
10
0
10
1
10
2
Junction Temperature (°C)
Gate Current Pulse Width (s)
R07DS1438EJ0500 Rev.5.00
May. 10, 2019
Page 3 of 7
BCR3AS-12A
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Maximum On-State Power Dissipation
8
Transient Thermal Impedance (°C/W)
4
On-State Power Dissipation (W)
7
6
5
4
3
2
1
0
0
1
2
3
4
3
360° Conduction
Resistive,
inductive loads
2
1
0
-1
10
10
0
10
1
10
2
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
Ambient Temperature (°C)
4
Case Temperature (°C)
140
140
120
100
80
60
40
20
0
0
0.5
3
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Breakover Voltage vs.
Junction Temperature
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
160
140
120
100
80
60
40
20
Typical Example
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
10
5
10
4
10
3
0
- 40
0
40
80
120
160
10
2
- 40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1438EJ0500 Rev.5.00
May. 10, 2019
Page 4 of 7
BCR3AS-12A
Data Sheet
Holding Current vs.
Junction Temperature
10
2
Distribution
10
2
Latching Current vs.
Junction Temperature
T
2
+, G -
T
2
- , G-
T
2
+,
G+
10
1
Latching Current (mA)
Holding Current (mA)
Typical Example
10
1
Distribution
V
D
=12V
10
0
- 40
0
40
80
120
160
Typical Example
10
0
- 40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Commutation Characteristics (Tj=125°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Typical Example
140
Tj = 125°C
120
100
80
60
40
20
0
1
10
10
2
I Quadrant
III Quadrant
10
1
Typical Example
Main Voltage
(dv/dt)c
Tj = 125°C
Main Current
I
T
= 4 A
I
T
t
= 500
s
t
V
D
= 200 V
f = 3 Hz
I Quadrant
Time
V
D
(di/dt)c
Time
Minimum
Value
III Quadrant
10
3
10
4
10
0
10
0
10
1
10
2
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6
6
6V
V
A
330
6V
V
A
330
Test Procedure I
6
Test Procedure II
6V
V
A
330
Test Procedure III
R07DS1438EJ0500 Rev.5.00
May. 10, 2019
Page 5 of 7
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