MCM63F837 datasheet, PDF - EEWORLD Datasheet

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MCM63F837: Description256K x 36 and 512K x 18 Bit Flow鈥揟hrough BurstRAM Synchronous Fast Static RAM; File Size723KB，28 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM63F837 Overview

256K x 36 and 512K x 18 Bit Flow鈥揟hrough BurstRAM Synchronous Fast Static RAM

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MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

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256K x 36 and 512K x 18 Bit

Flow–Through BurstRAM

Synchronous Fast Static RAM

The MCM63F837 and MCM63F919 are 8M–bit synchronous fast static RAMs

designed to provide a burstable, high performance, secondary cache for the

PowerPC™ and other high performance microprocessors. The MCM63F837

(organized as 256K words by 36 bits) and the MCM63F919 (organized as 512K

words by 18 bits) are fabricated in Motorola’s high performance silicon gate

CMOS technology. Synchronous design allows precise cycle control with the

use of an external clock (K).

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)

controlled through positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63F837 and MCM63F919

(burst sequence operates in linear or interleaved mode dependent upon the state

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and

synchronous write enable (SW) are provided to allow writes to either individual

bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,

SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx

are asserted with SW. All bytes are written if either SGW is asserted or if all SBx

and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

The MCM63F837 and MCM63F919 operate from a 3.3 V core power supply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–A and JESD8–5 compatible.

•

MCM63F837/MCM63F919–7 = 7 ns Access/8.5 ns Cycle (117 MHz)

MCM63F837/MCM63F919–8 = 8 ns Access/10 ns Cycle (100 MHz)

MCM63F837/MCM63F919–8.5 = 8.5 ns Access/11 ns Cycle (90 MHz)

•

3.3 V

±5%

Core Power Supply, 2.5 V or 3.3 V I/O Supply

•

ADSP, ADSC, and ADV Burst Control Pins

•

Selectable Burst Sequencing Order (Linear/Interleaved)

•

Single–Cycle Deselect Timing

•

Internally Self–Timed Write Cycle

•

Byte Write and Global Write Control

•

Sleep Mode (ZZ)

•

Simplified JTAG

•

JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages

MCM63F837

MCM63F919

TQ PACKAGE

TQFP

CASE 983A–01

Freescale Semiconductor, Inc...

ZP PACKAGE

PBGA

CASE 999–02

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 1

8/23/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM63F837•MCM63F919

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