MCM63P737KZP133R datasheet, PDF

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MCM63P737KZP133R: Description128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM; Categorystorage storage; File Size401KB，20 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM63P737KZP133R Overview

128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

MCM63P737KZP133R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	4 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	36
Number of functions	1
Number of terminals	119
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	2.4 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63P737K/D

Advance Information

128K x 36 and 256K x 18 Bit

Pipelined BurstRAM

Synchronous Fast Static RAM

The MCM63P737K and MCM63P819K are 4M–bit synchronous fast static

RAMs designed to provide a burstable, high performance, secondary cache. The

MCM63P737K (organized as 128K words by 36 bits) and the MCM63P819K

(organized as 256K words by 18 bits) integrate input registers, an output register,

a 2–bit address counter, and high speed SRAM onto a single monolithic circuit

for reduced parts count in cache data RAM applications. Synchronous design

allows precise cycle control with the use of an external clock (K).

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)

controlled through positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P737K and MCM63P819K

(burst sequence operates in linear or interleaved mode dependent upon the state

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb

controls DQb, etc. Individual bytes are written if the selected byte writes SBx are

asserted with SW. All bytes are written if either SGW is asserted or if all SBx and

SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggered output register and then released to the output buffers at the next

rising edge of clock (K).

The MCM63P737K and MCM63P819K operate from a 3.3 V core power

supply and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and

outputs are JEDEC standard JESD8–5 compatible.

•

MCM63P737K / MCM63P819K–166 = 3.5 ns Access / 6 ns Cycle (166 MHz)

MCM63P737K / MCM63P819K–150 = 3.8 ns Access / 6.7 ns Cycle (150 MHz)

MCM63P737K / MCM63P819K–133 = 4 ns Access / 7.5 ns Cycle (133 MHz)

•

3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

•

ADSP, ADSC, and ADV Burst Control Pins

•

Selectable Burst Sequencing Order (Linear/Interleaved)

•

Single–Cycle Deselect Timing

•

Internally Self–Timed Write Cycle

•

Byte Write and Global Write Control

•

Sleep Mode (ZZ)

•

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

MCM63P737K

MCM63P819K

TQ PACKAGE

TQFP

CASE 983A–01

Freescale Semiconductor, Inc...

ZP PACKAGE

PBGA

CASE 999–02

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

1/24/00

Motorola, Inc. 2000

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM63P737K•MCM63P819K

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