DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D456
BGO747; BGO747/FC0;
BGO747/SC0
750 MHz optical receivers
Product specification
Supersedes data of 2002 Apr 18
2002 Dec 03
Philips Semiconductors
Product specification
750 MHz optical receivers
FEATURES
•
Excellent linearity
•
Extremely low noise up to 750 MHz
•
Excellent flatness (straight line)
•
Standard CATV outline
•
Rugged construction
•
Gold metallization ensures
excellent reliability
•
High optical input power range.
APPLICATIONS
•
CATV optical node systems
operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
High dynamic range optical receiver
amplifier modules in a standard
SOT115 package where the
non-jacketed fibre has either no
connector or an FC/APC connector or
an SC/APC connector.
The amplifier supply voltage pin and
the photo diode bias voltage pin both
connect to 24 V (DC).
The modules have a monomode
optical input suitable for
1290 to 1600 nm wavelengths, a
terminal to monitor the photo diode
current and an electrical output
having a characteristic impedance of
75
Ω.
BGO747; BGO747/FC0;
BGO747/SC0
PINNING
PIN
1
2
3
4
5
7
8
9
DESCRIPTION
monitor current
common
common
+V
B
of the photo diode
+V
B
of the amplifier
common
common
output
age
1
2
3
4
5
7
8
9
1
2
3
4
5
7
8
9
1
2
3
4
5
7
8
9
Side view
MBK044
Side view
Side view
MBL040
MBL041
Fig.2
Fig.1
Simplified outline
BGO747 (SOT115T).
Simplified outline
BGO747/FC0
(SOT115X).
Fig.3
Simplified outline
BGO747/SC0
(SOT115Y).
QUICK REFERENCE DATA
SYMBOL
f
s
22
d
2
F
I
tot
PARAMETER
frequency range
output return losses
optical input return losses
second order distortion
equivalent noise input
total current consumption (DC)
f = 746.5 MHz
f = 40 to 750 MHz
V
B
= 24 V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Dec 03
2
f = 40 to 785 MHz
CONDITIONS
MIN.
40
11
45
−
−
175
−
−
−63
7
205
MAX.
750
UNIT
MHz
dB
dB
dB
pA/√Hz
mA
Philips Semiconductors
Product specification
750 MHz optical receivers
HANDLING
BGO747; BGO747/FC0;
BGO747/SC0
Fibreglass optical coupling: maximum tensile strength = 5 N; minimum bending radius = 35 mm.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
f
T
stg
T
mb
P
in
ESD
PARAMETER
frequency range
storage temperature
operating mounting base temperature
optical input power
ESD sensitivity
continuous
human body model; R = 1.5 kΩ;
C = 100 pF
CONDITIONS
MIN.
40
−40
−20
−
500
MAX.
750
+85
+85
5
−
UNIT
MHz
°C
°C
mW
V
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 30
°C;
Z
L
= 75
Ω.
SYMBOL
S
BGO747
BGO747/FC0, BGO747/SC0
FL
SL
s
22
d
2
flatness straight line
slope straight line
output return losses
optical input return losses
second order distortion
f
m
= 54 MHz; notes 1 and 3
f
m
= 446.5 MHz; notes 1 and 4
f
m
= 548.5 MHz; notes 1 and 5
f
m
= 746.5 MHz; notes 1 and 6
d
3
third order distortion
f
m
= 55.25 MHz; notes 2 and 7
f
m
= 445.25 MHz; notes 2 and 8
f
m
= 547.25 MHz; notes 2 and 9
F
s
λ
λ
L
equivalent noise input
spectral sensitivity
optical wavelength
length of optical fibre
BGO747
BGO747/FC0, BGO747SC0
I
tot
I
bias
total current consumption (DC)
diode bias current at pin 4 (DC)
fibre; SM type; 9/125
µm
fibre; SM type; 9/125
µm
1
746
175
−
−
861
205
25
m
mm
mA
mA
f = 40 to 750 MHz
λ
= 1310
±20
nm
λ
= 1550
±20
nm
PARAMETER
responsivity
λ
= 1300 nm
λ
= 1300 nm
f = 40 to 750 MHz
f = 40 to 785 MHz
800
750
0
11
45
−
−
−
−
−
−
−
−
0.85
0.9
1290
−
−
1
2
−
−
−73
−68
−67
−63
−80
−75
−75
−75
7
−
−
1600
V/W
V/W
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
pA/√Hz
A/W
A/W
nm
CONDITIONS
MIN.
MAX.
UNIT
peak to valley; f = 40 to 750 MHz
−
f
m
= 745.25 MHz; notes 2 and 10
−
2002 Dec 03
3
Philips Semiconductors
Product specification
750 MHz optical receivers
Notes
1. Two laser test; each laser with 25% modulation index; P
opt
= 1 mW (total).
2. Three laser test; each laser with 60% modulation index; P
opt
= 1 mW (total).
3. f
m
= 54 MHz; f
p
= 187.25 MHz; f
q
= 133.25 MHz.
4. f
m
= 446.5 MHz; f
p
= 97.25 MHz; f
q
= 349.25 MHz.
5. f
m
= 548 .5MHz; f
p
= 109.25 MHz; f
q
= 439.25 MHz.
6. f
m
= 746.5 MHz; f
p
= 133.25 MHz; f
q
= 613.25 MHz.
7. f
m
= 55.25 MHz; f
p
= 109.25 MHz; f
q
= 133.25 MHz f
r
= 187.25 MHz.
8. f
m
= 445.25 MHz; f
p
= 193.25 MHz; f
q
= 349.25 MHz f
r
= 97.25 MHz.
9. f
m
= 547.25 MHz; f
p
= 217.25 MHz; f
q
= 439.25 MHz f
r
= 109.25 MHz.
10. f
m
= 745.25 MHz; f
p
= 133.25 MHz; f
q
= 265.25 MHz f
r
= 613.25 MHz.
BGO747; BGO747/FC0;
BGO747/SC0
handbook, halfpage
Pin 1
10 kΩ
photo
current
1 kΩ
MLB151
Fig.4 Monitor current pin.
2002 Dec 03
4
Philips Semiconductors
Product specification
750 MHz optical receivers
PACKAGE OUTLINES
BGO747; BGO747/FC0;
BGO747/SC0
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input; 8 gold-plated in-line leads
D
E
S2
Z
p
N1
N2
M
A2
1
A
L
S1
F
S
W
d
B
U2
Q
e
e1
q2
q1
y
M
B
p
y
M
B
y
M
B
b
w
M
2
3
4
5
7
8
9
N
SOT115T
M1
M2
c
U1
q
0
optical input
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.1
b
c
D
d
E
max. max. max.
e
e1
F
L
min.
8.8
5
scale
10 mm
S1
S2
U1
U2
max.
8
W
w
y
0.1
Z
max.
12
16.7 4.95
44.75
16.1 4.55
6-32 0.25
UNC
M
2.5
M1
1.6
M2
N1 N2
N
min. max. max.
5
p
4.15
3.85
Q
max.
2.4
q
q1
q2
S
4.2
mm 20.8
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
0.9 1000 10.7
38.1 25.4 10.2
OUTLINE
VERSION
SOT115T
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-04-13
01-08-10
2002 Dec 03
5
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