MCM63P837ZP200R datasheet, PDF

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MCM63P837ZP200R: Description256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM; File Size730KB，30 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM63P837ZP200R Overview

256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

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by MCM63P837/D

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256K x 36 and 512K x 18 Bit

Pipelined BurstRAM

Synchronous Fast Static RAM

The MCM63P837 and MCM63P919 are 8M–bit synchronous fast static RAMs

designed to provide a burstable, high performance, secondary cache for the

PowerPC™ and other high performance microprocessors. The MCM63P837

(organized as 256K words by 36 bits) and the MCM63P919 (organized as 512K

words by 18 bits) are fabricated in Motorola’s high performance silicon gate

CMOS technology. Synchronous design allows precise cycle control with the use

of an external clock (K).

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)

controlled through positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P837 and MCM63P919

(burst sequence operates in linear or interleaved mode dependent upon the state

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb

controls DQb, etc. Individual bytes are written if the selected byte writes SBx are

asserted with SW. All bytes are written if either SGW is asserted or if all SBx and

SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggered output register and then released to the output buffers at the next

rising edge of clock (K).

The MCM63P837 and MCM63P919 operate from a 3.3 V core power supply.

All outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are

JEDEC standard JESD8–A and JESD8–5 compatible.

•

MCM63P837/MCM63P919–225 = 2.6 ns Access/4.4 ns Cycle (225 MHz)

MCM63P837/MCM63P919–200 = 3 ns Access/5 ns Cycle (200 MHz)

MCM63P837/MCM63P919–166 = 3.5 ns Access/6 ns Cycle (166 MHz)

•

3.3 V

±5%

Core Power Supply, 2.5 V or 3.3 V I/O Supply

•

ADSP, ADSC, and ADV Burst Control Pins

•

Selectable Burst Sequencing Order (Linear/Interleaved)

•

Single–Cycle Deselect Timing

•

Internally Self–Timed Write Cycle

•

Byte Write and Global Write Control

•

Sleep Mode (ZZ)

•

Simplified JTAG

•

JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages

MCM63P837

MCM63P919

TQ PACKAGE

TQFP

CASE 983A–01

Freescale Semiconductor, Inc...

ZP PACKAGE

PBGA

CASE 999–02

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 1

8/27/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM63P837•MCM63P919

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