Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV74W series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
≤
1.12 V
I
O(AV)
= 30 A
t
rr
≤
60 ns
SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV74W series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV74W
T
mb
≤
136˚C
square wave;
δ
= 0.5;
T
mb
≤
94 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
30
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses.
April 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
BYV74W series
TYP.
0.95
1.08
1.15
10
0.3
40
50
4.2
2.5
MAX.
1.12
1.25
1.36
50
0.8
60
60
5.2
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
30
25
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
BYV44
Tmb(max) / C
88
D = 1.0
90
0.5
102
114
t
p
T
t
t
rr
time
20
15
10
0.2
0.1
Q
I
R
I
s
10%
100%
5
I
t
p
D=
126
138
T
rrm
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
√
D.
BYV44
I
F
20
PF / W
Vo = 0.89
Rs = 0.0137
Tmb(max) / C
102
a = 1.57
1.9
2.2
114
15
4
10
2.8
time
VF
V
VF
time
126
5
138
fr
0
0
5
10
150
15
IF(AV) / A
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
April 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74W series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
1A
100
2A
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C; per diode
Fig.8. Maximum Q
s
at T
j
= 25˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C; per
diode
Fig.9. Transient thermal impedance per diode
Z
th j-mb
= f(t
p
)
50
IF / A
Tj = 25 C
Tj = 150 C
BYV74
40
30
typ
20
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
April 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3
3.5
21
max
15.5
max
seating
plane
7.3
16 max
5.3 max
1.8
o 3.5
max
BYV74W series
2.5
4.0
max
1
2.2 max
3.2 max
5.45
2
3
0.9 max
1.1
5.45
0.4 M
15.5
min
Fig.10. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
April 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BYV74W series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
5
Rev 1.000
京公网安备 11010802033920号
EEWORLD
