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MD7IC2050NR1_10

Description
1880 MHz - 2100 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size421KB,24 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet Parametric View All

MD7IC2050NR1_10 Overview

1880 MHz - 2100 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

MD7IC2050NR1_10 Parametric

Parameter NameAttribute value
Maximum input power28 dBm
Maximum operating frequency2100 MHz
Minimum operating frequency1880 MHz
Processing package descriptionROHS COMPLIANT, PLASTIC, TO-270, WB-14, CASE 1621-02, 14 PIN
stateACTIVE
Maximum voltage standing wave ratio5
structureCOMPONENT
terminal coatingTIN
Impedance characteristics50 ohm
Microwave RF TypeNARROW BAND HIGH POWER
Freescale Semiconductor
Technical Data
Document Number: MD7IC2050N
Rev. 1, 5/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2050N wideband integrated circuit is designed with on- chip
matching that makes it usable from 1750- 2050 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical Doherty Single-Carrier W-CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA, V
GS2B
= 1.4 Vdc, P
out
= 10 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2025 MHz
G
ps
(dB)
30.5
PAE
(%)
34.7
Output PAR
(dB)
8.7
ACPR
(dBc)
-37.4
MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
1880-2100 MHz, 10 W AVG., 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 20 Watts to 80 Watts
CW P
out
Typical P
out
@ 3 dB Compression Point
]
74 Watts CW
1880 MHz
Typical Doherty Single-Carrier W-CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA, V
GS2B
= 1.4 Vdc, P
out
= 10 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
30.3
30.2
30.1
PAE
(%)
35.2
34.9
34.8
Output PAR
(dB)
8.6
8.6
8.7
ACPR
(dBc)
-34.9
-36.3
-36.9
CASE 1618-02
TO-270 WB-14
PLASTIC
MD7IC2050NR1
CASE 1621-02
TO-270 WB-14 GULL
PLASTIC
MD7IC2050GNR1
Features
100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
CASE 1617-02
TO-272 WB-14
PLASTIC
MD7IC2050NBR1
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009-2010. All rights reserved.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
1
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