IR-enhanced
Si PIN photodiodes
S11499 series
Large area, enhanced near IR sensitivity,
using a MEMS technology
HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure
formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitiv-
ity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
much higher sensitivity to YAG laser light (1.06
μm).
It also offers improved temperature characteristics of sensitivity at wave-
lengths longer than 950 nm.
Features
High sensitivity: 0.6 A/W (λ=1060 nm)
Large active area:
φ5.0
mm (S11499-01)
High reliability package: TO-5/TO-8 metal package
Applications
YAG laser monitor
General ratings
Parameter
Package
Active area
S11499
TO-5
φ3.0
S11499-01
TO-8
φ5.0
Unit
-
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
Condition
V
R
max. Ta=25 °C
Topr
Tstg
S11499
30
-40 to +100
-55 to +125
S11499-01
Unit
V
°C
°C
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Cut-off frequency
Terminal capacitance
Symbol
λ
λp
S
Isc
I
D
fc
Ct
Condition
Min.
-
-
0.54
6.0
-
-
-
S11499
Typ.
360 to 1140
1000
0.6
7.8
0.05
30
13
Max.
-
-
-
-
5
-
-
Min.
-
-
0.54
15
-
-
-
S11499-01
Typ.
360 to 1140
1000
0.6
21
0.1
15
33
Max.
-
-
-
-
10
-
-
Unit
nm
nm
A/W
μA
nA
MHz
pF
λ=1060
nm
100
lx
V
R
=20 V
V
R
=20 V, -3 dB
V
R
=20 V, f=1 MHz
www.hamamatsu.com
1
Si PIN photodiodes
S11499 series
Dimensional outlines (unit: mm)
S11499
Window
5.9 ± 0.1
9.1 ± 0.2
4.2 ± 0.2
8.1 ± 0.1
Window
10.5 ± 0.1
S11499-01
13.9 ± 0.2
5.0 ± 0.2
0.5 max.
7.5 ± 0.2
Case
The glass window may extend a
maximum of 0.3 mm above the
upper surface of the cap.
KPINA0027EC
12.35 ± 0.1
Photosensitive
surface
0.45
Lead
(2.5)
0.4 max.
Photosensitive
surface
(20)
0.45
Lead
(2.7)
Index mark
1.4
5.08 ± 0.25
1.5 max.
1.0 max.
Case
The glass window may extend a
maximum of 0.2 mm above the
upper surface of the cap.
KPINA0024EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
(15)
Cat. No. KPIN1082E01 Mar. 2010 DN
3
Analog electronics
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