MRF7S16150HR3 datasheet, PDF - EEWORLD Datasheet

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MRF7S16150HR3: DescriptionL BAND, Si, N-CHANNEL, RF POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size447KB，12 Pages; ManufacturerFREESCALE (NXP)

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MRF7S16150HR3 Overview

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF7S16150HR3 Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	65 V
Processing package description	ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
surface mount	Yes
Terminal form	FLAT
Terminal location	pair
Packaging Materials	Ceramic, Metal-SEALED COFIRED
structure	single
Shell connection	source
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF power
highest frequency band	L band

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Freescale Semiconductor

Technical Data

Document Number: MRF7S16150H

Rev. 1, 12/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for WiMAX base station applications with frequencies up to

1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

•

Typical WiMAX Performance: V

= 28 Volts, I

= 1500 mA,

out

= 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM

4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF.

Power Gain — 19.7 dB

Drain Efficiency — 25.4%

Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF

ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW

Output Power

•

out

@ 1 dB Compression Point

150 Watts CW

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Integrated ESD Protection

•

Greater Negative Gate - Source Voltage Range for Improved Class C

Operation

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF7S16150HR3

MRF7S16150HSR3

1600- 1660 MHz, 32 W AVG., 28 V

WiMAX

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465 - 06, STYLE 1

NI - 780

MRF7S16150HR3

CASE 465A - 06, STYLE 1

NI - 780S

MRF7S16150HSR3

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate- Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

- 0.5, +65

- 6.0, +10

32, +0

- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 149 W CW

Case Temperature 75°C, 32 W CW

Symbol

θJC

Value

(2,3)

0.34

0.37

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF7S16150HR3 MRF7S16150HSR3

RF Device Data

Freescale Semiconductor

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