Memory ICs
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
128×16bits serial EEPROM
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W /
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
The BR93LC56-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 128 words x 16 bits (2,048 bits), and each word can be accessed individually and data
read from it and written to it. Operation control is performed using five types of commands.
The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write
operation, the internal status signal (READY or BUSY) can be output from the DO pin.
!
Applications
VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and
other battery-powered equipment requiring low voltage and low current
!
Features
1) 128 words
×
16 bits EEPROM
2) Operating voltage range
When reading : 2.0 to 5.5V
When writing : 2.7 to 5.5V
3) Low current consumption
Operating (at 5V) : 3mA (Max.)
Standby (at 5V) : 5µA (Max.)
4) Address can be incremented automatically during
read operations.
5) Auto erase and auto complete functions can be used
during write operations.
6) A write instruction inhibit function allows :
- write protection when power supply voltage is low.
- write disable state at power up.
- writing using command codes.
7) Compact packages
8) Display of READY / BUSY status
9) TTL-compatible input / output
10) Rewriting possible up to 100,000 times
11) Data can be stored for ten years without corruption.
!
Block diagram
Power supply
CS
Command decode
Control
Clock generation
Write
voltage detector
High voltage
generator
SK
disable
Address
Command
7bits
buffer
Address
decoder
7bits
2,048-bits
DI
register
Data
16bits
register
amplifier
R/W
16bits
EEPROM array
DO
Dummy bits
Memory ICs
!
Pin descriptions
CS
SK
DI
DO
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
1
2
3
4
8
V
CC
N.C.
N.C.
GND
N.C. 1
V
CC
CS
SK
2
3
4
8
7
6
5
N.C.
GND
DO
DI
BR93LC56-W
BR93LC56RF-W
BR93LC56RFJ-W
7
6
5
BR93LC56F-W
BR93LC56FJ-W
BR93LC56FV-W
Fig.1
Fig.2
Pin No.
BR93LC56-W
BR93LC56RF-W
BR93LC56RFJ-W
1
2
3
4
5
6
7
8
BR93LC56F-W
BR93LC56FJ-W
BR93LC56FV-W
3
4
5
6
7
8
1
2
Pin
name
Function
CS
SK
DI
DO
GND
N.C.
N.C.
V
CC
Chip select input
Serial clock input
Start bit, operating code, address, and serial data input
Serial data output, READY / BUSY internal status display output
Ground
Not connected
Not connected
Power supply
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Applied voltage
Symbol
V
CC
Limits
−0.3~+6.5
500
∗
1
350
∗
2
300
∗
3
−65~+125
−40~+85
−0.3~V
CC
+0.3
Unit
V
BR93LC56-W
Power
BR93LC56F-W / RF-W / FJ-W / RFJ-W
dissipation
BR93LC56FV-W
Storage temperature
Operating temperature
Terminal voltage
∗1
Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
∗2
Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
∗3
Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
Pd
mW
Tstg
Topr
−
°C
°C
V
!
Electrical characteristics
(Ta = 25°C)
Parameter
Power supply
voltage
Input voltage
Writing
Reading
Symbol
V
CC
V
IN
Min.
2.7
2.0
0
Typ.
−
−
−
Max.
5.5
5.5
V
CC
Unit
V
V
V
Memory ICs
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
!
Electrical characteristic curves
For 5V operation (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 5.0V
±
10%)
Parameter
Input low level voltage
Input high level voltage
Output low level voltage 1
Output high level voltage 1
Output low level voltage 2
Output high level voltage 2
Input leakage current
Output leakage current
Operating current
dissipation 1
Operating current
dissipation 2
Standby current
Symbol
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
I
LI
I
LO
I
CC1
Min.
−0.3
2.0
−
2.4
−
V
CC
−0.4
−1.0
−1.0
−
−
−
Typ.
−
−
−
−
−
−
−
−
1.5
Max.
0.8
V
CC
+
0.3
0.4
−
0.2
−
1.0
1.0
3.0
Unit
V
V
V
V
V
V
µA
µA
mA
Conditions
−
−
I
OL
=2.1mA
I
OH
=−0.4mA
I
OL
=10µA
I
OH
=−10µA
V
IN
=0V
~V
CC
V
OUT
=0V
~V
CC
, CS=GND
V
IN
=V
IH
/ V
IL
, DO=OPEN,
f=1MHz, WRITE
V
IN
=V
IH
/ V
IL
, DO=OPEN,
f=1MHz, READ
CS=SK=DI=GND, DO=OPEN
Measurement circuit
−
−
Fig.3
Fig.4
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
I
CC2
I
SB
0.7
1.0
1.5
5.0
mA
µA
Fig.7
Fig.8
For 3V operation (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 3.0V
±
10%)
Parameter
Input low level voltage
Input high level voltage
Output low level voltage
Output high level voltage
Input leakage current
Output leakage current
Operating current
dissipation 1
Operating current
dissipation 2
Standby current
Symbol
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
CC1
Min.
−0.3
0.7
×
V
CC
−
V
CC
−0.4
−1.0
−1.0
−
−
−
Typ.
−
−
−
−
−
−
0.5
Max.
0.15
×
V
CC
V
CC
+
0.3
0.2
−
1.0
1.0
2.0
Unit
V
V
V
V
µA
µA
mA
I
OL
=10µA
Conditions
−
−
I
OH
=−10µA
V
IN
=0V~V
CC
V
OUT
=0V~V
CC
, CS=GND
V
IN
=V
IH
/ V
IL
, DO=OPEN,
f=250kHz, WRITE
V
IN
=V
IH
/ V
IL
, DO=OPEN,
f=250kHz, READ
CS=SK=DI=GND, DO=OPEN
Measurement circuit
−
−
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
I
CC2
I
SB
0.2
0.4
1.0
3.0
mA
µA
Fig.7
Fig.8
For 2V operation (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 2.0V)
Parameter
Input low level voltage
Input high level voltage
Output low level voltage
Output high level voltage
Input leakage current
Output leakage current
Operating current
dissipation 2
Standby current
Symbol
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
CC2
I
SB
Min.
−0.3
0.7
×
V
CC
−
V
CC
−0.4
−1.0
−1.0
−
−
Typ.
−
−
−
−
−
−
0.2
0.4
Max.
0.15
×
V
CC
V
CC
+
0.3
0.2
−
1.0
1.0
1.0
3.0
Unit
V
V
V
V
µA
µA
mA
µA
I
OL
=10µA
Conditions
−
−
I
OH
=−10µA
V
IN
=0V
~V
CC
V
OUT
=0V
~V
CC
, CS=GND
V
IN
=V
IH
/ V
IL
, DO=OPEN,
f=200kHz, READ
CS=SK=DI=GND, DO=OPEN
Measurement circuit
−
−
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
Fig.8
Memory ICs
!
Measurement circuits
V
CC
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
V
CC
V
CC
V
CC
I
OL
DO
V
CC
I
OH
I
LI
DO
A
CS,SK,DI
V
CC
GND
V
V
OL
GND
V
V
OH
V
IN
= O~V
CC
GND
Control output to "LOW"
Control output to "HIGH"
Fig.3 "LOW" output voltage circuit
Fig.4 "HIGH" output voltage circuit
Fig.5 Input leak current circuit
V
CC
V
CC
V
CC
A
V
CC
I
OL
CS
GND
DO
A
f
SK
=1MHz / 250kHz / 200kHz
V
O
=O~V
CC
V
IN
=V
IH
/ V
IL
WRITE / READ INPUT
DI
GND
CS
SK
V
CC
I
CC
A
I
SB
CS
DO
OPEN
SK
V
CC
DO
OPEN
DI
GND
Fig.6 Output leak current circuit
Fig.7 Supply current circuit
Fig.8 Standby current circuit
!
Circuit operation
(1) Command mode
With these ICs, commands are not recognized or acted upon until the start bit is received. The start bit is taken as
the first “1” that is received after the CS pin rises.
Command
Read (READ)
∗
1
Write enabled (WEN)
Write (WRITE)
∗
2
Write all addresses (WRAL)
∗
2
Write disabled (WDS)
Erase (ERASE)
∗
3
Chip erase (ERAL)
∗
3
Start Operating
code
bit
Address
Data
1
1
1
1
1
1
1
10
00
01
00
00
11
00
0A6~A0
11XXXXXX
0A6~A0
01XXXXXX
00XXXXXX
0A6~A0
10XXXXXX
−
−
D15~D0
D15~D0
−
−
−
X: Either V
IH
or V
IL
∗1
After setting of the read command and input of the SK clock, data corresponding to the specified address is
output, with data corresponding to upper addresses then output in sequence. (Auto increment function)
∗2
When the write or write all addresses command is executed, all data in the selected memory cell is
erased automatically, and the input data is written to the cell.
∗3
These modes are optional modes. Please contact Rohm for information on operation timing.
Memory ICs
BR93LC56-W / BR93LC56F-W / BR93LC56RF-W
BR93LC56FJ-W / BR93LC56RFJ-W / BR93LC56FV-W
(2) Operation timing characteristics
For 5V operation (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 5.0V
±
10%)
Parameter
SK clock frequency
SK "HIGH" time
SK "LOW" time
CS "LOW" time
CS setup time
DI setup time
CS hold time
DI hold time
Data "1" output delay time
Data "0" output delay time
Time from CS to output confirmation
Time from CS to output High impedance
Write cycle time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E / W
Min.
−
450
450
450
50
100
0
100
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
1
−
−
−
−
−
−
−
500
500
500
100
10
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
For low voltage operation (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 3.0V
±
10%)
Parameter
SK clock frequency
SK "HIGH" time
SK "LOW" time
CS "LOW" time
CS setup time
DI setup time
CS hold time
DI hold time
Data "1" output delay time
Data "0" output delay time
Time from CS to output confirmation
Time from CS to output High impedance
Write cycle time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E / W
Min.
−
1
1
1
200
400
0
400
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
250
−
−
−
−
−
−
−
2
2
2
400
25
Unit
kHz
µs
µs
µs
ns
ns
ns
ns
µs
µs
µs
ns
ms
When reading at low voltage (unless otherwise noted, Ta =
−40
to + 85°C, V
CC
= 2.0V)
Parameter
SK clock frequency
SK "HIGH" time
SK "LOW" time
CS "LOW" time
CS setup time
DI setup time
CS hold time
DI hold time
Data "1" output delay time
Data "0" output delay time
Time from CS to output High impedance
Not designed for radioactive rays.
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
DF
Min.
−
2
2
2
400
800
0
800
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
Max.
200
−
−
−
−
−
−
−
4
4
800
Unit
kHz
µs
µs
µs
ns
ns
ns
ns
µs
µs
ns
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