MBRD12150CT
Technical Data
Data Sheet N0814, Rev. B
MBRD12150CT SCHOTTKY RECTIFIER
Features
150℃ T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DPAK
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(peg leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
C
=90°C,
rectangular wave form
8.3 ms, half Sine pulse
Max.
150
6(peg leg)
12(peg device)
120
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current (per leg) *
Symbol
V
F1
V
F2
I
R1
I
R2
Junction Capacitance(per leg)
* Pulse width < 300 µs, duty cycle < 2%
Condition
@ 6A, Pulse, T
J
= 25
C
@ 6A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C,
f
SIG
= 1MHz
Typ.
0.86
0.75
0.001
0.1
90
Max.
0.93
0.80
1
7.0
200
Units
V
V
mA
mA
pF
C
T
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MBRD12150CT
Technical Data
Data Sheet N0814, Rev. B
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case(per leg)
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
-
-
DPAK
Specification
-55 to +150
-55 to + 150
4.5
0.39
Units
C
C
C/W
g
Ratings and Characteristics Curves
μ
10000
Junction Capacitance (PF)
1000
100
1000
TJ=25℃
Instantaneous Reverse Current-IR(
A)
10
1
0.1
0.01
10
20
30
40
TJ=125℃
100
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.2-Typical Reverse Characteristics
100
10
TJ=125℃
TJ=25℃
1
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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MBRD12150CT
Technical Data
Data Sheet N0814, Rev. B
Mechanical Dimensions DPAK
SYMBOL
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
Θ
h
V
Millimeters
Min.
Max.
2.20
2.40
0.00
0.127
0.66
0.86
0.46
0.60
6.50
6.70
5.13
5.46
4.83 REF.
6.00
6.20
2.186
2.386
9.70
10.40
2.90 REF.
1.40
1.70
1.60 REF.
0.60
1.00
1.10
1.30
0°
8°
0.00
0.30
5.35 REF.
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.024
0.256
0.264
0.202
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.381
0.409
0.144 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0°
8°
0.000
0.012
0.211 REF.
Ordering Information
Device
MBRD12150CT
MBRD12150CTTR
Marking Diagram
Shipping
2500pcs / reel
2500pcs / reel
Where XXXXX is YYWWL
MBR
D
12
150
CT
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (12A)
= Reverse Voltage (150V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Package
DPAK
(Pb-Free)
DPAK
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
Packaging specification.
Cautions：Molding
resin
Epoxy resin UL:94V-0
Carrier Tape Specification DPAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
6.80
10.40
2.60
Φ1.45
1.65
7.40
3.90
7.90
1.90
15.90
Millimeters
Min.
Max.
7.00
10.60
2.80
Φ1.65
1.85
7.60
4.10
8.10
2.10
16.30
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MBRD12150CT
Technical Data
Data Sheet N0814, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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