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IRFB4321GPBF

Description
83 A, 150 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size283KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFB4321GPBF Overview

83 A, 150 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRFB4321GPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionLEAD FREE PACKAGE-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)83 A
Maximum drain current (ID)83 A
Maximum drain-source on-resistance0.015 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)330 W
Maximum pulsed drain current (IDM)330 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 96215
IRFB4321GPbF
Applications
l
Motion Control Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
Hard Switched and High Frequency Circuits
Benefits
l
Low R
DSON
Reduces Losses
l
Low Gate Charge Improves the Switching
Performance
l
Improved Diode Recovery Improves Switching &
EMI Performance
l
30V Gate Voltage Rating Improves Robustness
l
Fully Characterized Avalanche SOA
l
Lead-Free
l
Halogen-Free
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
D
150V
12m
:
15m
:
83A
D
G
S
G
D
S
TO-220AB
IRFB4321GPbF
D
S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Max.
83
59
330
330
2.2
±30
120
-55 to + 175
300
10lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
c
Units
A
W
W/°C
V
mJ
d
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
°C
x
x
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
g
Parameter
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
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