MRF21045LSR3 datasheet, PDF - EEWORLD Datasheet

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MRF21045LSR3: DescriptionRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; File Size472KB，11 Pages; ManufacturerFREESCALE (NXP)

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Freescale Semiconductor

Technical Data

Document Number: MRF21045

Rev. 12, 10/2008

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

NOT RECOMMENDED FOR NEW DESIGN

2110-

-2170 MHz, 45 W, 28 V

LATERAL N-

-CHANNEL

RF POWER MOSFETs

CASE 465E-

-04, STYLE 1

NI-

-400

MRF21045LR3

CASE 465F-

-04, STYLE 1

NI-

-400S

MRF21045LSR3

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Symbol

DSS

stg

Value

--0.5, +65

--0.5, +15

105

0.60

--65 to +150

150

200

Unit

Vdc

W/°C

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

θJC

Value

(1)

1.65

Unit

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

Class

1 (Minimum)

M2 (Minimum)

1. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF21045LR3 MRF21045LSR3

RF Device Data

Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L

applications.

•

Typical 2--carrier W--CDMA Performance for V

= 28 Volts, I

= 500 mA,

f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels

measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,

Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz

and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — --37.5 dBc

ACPR — --41 dBc

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

•

Internally Matched for Ease of Use

•

High Gain, High Efficiency and High Linearity

•

Integrated ESD Protection

•

Designed for Maximum Gain and Insertion Phase Flatness

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

MRF21045LR3

MRF21045LSR3

MRF21045LSR3 Related Products

	MRF21045LSR3	MRF21045LR3_08
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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