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MRF19045LSR3

Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size380KB,10 Pages
ManufacturerFREESCALE (NXP)
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MRF19045LSR3 Overview

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF19045
Rev. 9, 10/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical CDMA Performance @ 1930 MHz, 26 Volts, I
DQ
= 550 mA
Multi - carrier IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045LR3
MRF19045LSR3
1930 - 1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
105
0.60
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
1.65
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF19045LR3 MRF19045LSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

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