BS250AMO datasheet, PDF - EEWORLD Datasheet

BS250AMO: DescriptionTRANSISTOR 250 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size48KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BS250AMO Overview

TRANSISTOR 250 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	45 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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