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BS250CSM4

Description
150mA, 45V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED, CERAMIC, LCC-4
CategoryDiscrete semiconductor    The transistor   
File Size17KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BS250CSM4 Overview

150mA, 45V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED, CERAMIC, LCC-4

BS250CSM4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
Parts packaging codeLCC
package instructionSMALL OUTLINE, R-CDSO-N4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Minimum drain-source breakdown voltage45 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-CDSO-N4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BS250CSM4
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL ENHANCEMENT MODE IN A
CERAMIC SURFACE MOUNT PACKAGE FOR
HIGH REL APPLICATIONS
5.59 ± 0.13
(0.22 ± 0.005)
0.25 ± 0.03
(0.01 ± 0.001)
1.40 ± 0.15
(0.055 ± 0.006)
FEATURES
• V
DSS
= 45V
0.23 m
(0.009)
0.64 ± 0.08
(0.025 ± 0.003)
0.23 rad.
(0.009)
3
2
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
4
1
• I
D
= 0.18A
• r
dson
= 14 ohms
• Hermetic Surface Mount Package
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 PACKAGE
Underside View
PAD 1 - Drain
PAD 2 - N/C
PAD 3 - Source
PAD 4 - Gate
• Screening Option Available
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
STG
, T
J
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
@T
A
= 25°C
@T
A
= 100°C
Maximum Junction and Storage Temperature Range
@T
A
= 25°C
@T
A
= 100°C
45V
"30V
0.15A
0.095A
0.69A
0.83W
0.32W
150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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