BSH120T
N-channel enhancement mode field-effect transistor
Rev. 01 — 06 September 2000
M3D186
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSH120T in SOT54 (TO-92).
2. Features
s
s
s
s
TrenchMOS™ technology
Low on-state resistance
Very fast switching
Logic level compatible.
3. Applications
s
Relay drivers
s
DC to DC converters
s
Logic level translators.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT54, simplified outline and symbol
Description
source (s)
drain (d)
gate (g)
g
03ab40
Simplified outline
Symbol
d
3 21
MBB076
s
SOT54 (TO-92)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
j
= 25 to 150
°C
T
amb
= 25
°C;
V
GS
= 10 V
T
amb
= 25
°C
V
GS
= 10 V; I
D
= 2.2 A
V
GS
= 4.5 V; I
D
= 1 A
Typ
−
−
−
−
80
120
Max
30
2.2
0.83
150
100
200
Unit
V
A
W
°C
mΩ
mΩ
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
amb
= 25
°C
peak source (diode forward) current T
amb
= 25
°C;
t
p
≤
10
µs
T
amb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
amb
= 100
°C;
V
GS
= 10 V;
Figure 2
T
amb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
amb
= 25
°C;
Figure 1
Conditions
T
j
= 25 to 150
°C
T
j
= 25 to 150
°C;
R
GS
= 20 kΩ
Min
−
−
−
−
−
−
−
−65
−65
−
−
Max
30
30
±20
2.2
1.4
9
0.83
+150
+150
0.7
9
Unit
V
V
V
A
A
A
W
°C
°C
A
A
Source-drain diode
9397 750 07451
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 06 September 2000
2 of 13
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
120
03aa11
03aa19
120
I
der
100
(%)
Pder 100
(%)
80
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
175
Tamb (oC)
0
0
25
50
75
100
125 150 175
o
Tamb ( C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
10
I
D
(A)
1
D.C.
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ac50
R
DSon
= V
DS
/ I
D
tp = 100 µs
1 ms
10 ms
100 ms
10-1
P
δ
=
tp
T
tp
t
T
10-2
10-1
T
amb
= 25
°C;
I
DM
is single pulse.
1
10
V
DS
(V)
102
Fig 3. Safe operating area; drain and peak drain currents as a function of drain-source voltage.
9397 750 07451
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 06 September 2000
3 of 13
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
R
th(j-a)
Thermal characteristics
Conditions
vertical in still air; lead length
≤
4 mm;
Figure 4
Value Unit
150
K/W
thermal resistance from junction to ambient
Symbol Parameter
7.1 Transient thermal impedance
103
Z
th(j-a)
(K/W)
102
03ac49
δ
= 0.5
0.2
0.1
0.05
0.02
10
1
P
δ
=
tp
T
10-1
single pulse
tp
T
10-2
10-5
10-4
10-3
10-2
10-1
1
10
t
p
(s)
t
102
T
amb
= 25
°C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
9397 750 07451
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 06 September 2000
4 of 13
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 2.2 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 150
°C
V
GS
= 4.5 V; I
D
= 1 A;
Figure 7
and
8
Dynamic characteristics
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward) voltage I
S
= 1.25 A; V
GS
= 0 V;
Figure 13
reverse recovery time
recovered charge
I
S
= 1.25 A; dI
S
/dt =
−100
A/µs;
V
GS
= 0 V; V
DS
= 30 V
V
DD
= 20 V; R
D
= 18
Ω;
V
GS
= 10 V; R
G
= 6
Ω
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 12
V
DS
= 20 V; I
D
= 2.2 A;
Figure 11
I
D
= 2.3 A; V
DS
= 15 V; V
GS
= 10 V;
Figure 14
2
−
−
−
−
−
−
−
−
−
−
−
−
−
4
6.6
1
2.1
250
88
54
2.2
12.3
40
31
0.82
69
55
−
−
−
−
−
−
−
−
−
−
−
1.2
−
−
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
−
−
−
80
−
120
100
170
200
mΩ
mΩ
mΩ
−
−
−
10
0.6
10
100
10
100
nA
µA
nA
1
0.6
−
2
−
−
2.8
−
3.2
V
V
V
30
27
45
−
−
−
V
V
Conditions
Min
Typ
Max
Unit
Source-drain diode
9397 750 07451
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 06 September 2000
5 of 13
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