BSM05GD100DN1 datasheet, PDF - EEWORLD Datasheet

BSM05GD100DN1: DescriptionInsulated Gate Bipolar Transistor, 5A I(C), 1000V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSM05GD100DN1 Overview

Insulated Gate Bipolar Transistor, 5A I(C), 1000V V(BR)CES, N-Channel

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-PUFM-T17
Reach Compliance Code	unknown
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	1000 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-PUFM-T17
Number of components	6
Number of terminals	17
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	UPPER
Transistor component materials	SILICON

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