BSM100GB100D datasheet, PDF - EEWORLD Datasheet

BSM100GB100D: DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7; CategoryDiscrete semiconductor The transistor; File Size97KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM100GB100D Overview

Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	MODULE
package instruction	POWER MODULE-7
Contacts	7
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	100 A
Collector-emitter maximum voltage	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal on time (ton)	180 ns

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