BSM100GB120D datasheet, PDF - EEWORLD Datasheet

BSM100GB120D: DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size348KB，8 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSM100GB120D Overview

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	100 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.2 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1000 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Maximum opening time (tons)	220 ns
Nominal on time (ton)	180 ns
VCEsat-Max	3.3 V

	BSM100GB120D	BSM100GAL120D
Description	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
Maker	SIEMENS	SIEMENS
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	100 A	100 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.2 V	6.2 V
Gate-emitter maximum voltage	20 V	20 V
JESD-30 code	R-PUFM-X7	R-PUFM-X7
Number of components	2	1
Number of terminals	7	7
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	1000 W	1000 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Maximum opening time (tons)	220 ns	220 ns
Nominal on time (ton)	180 ns	180 ns
VCEsat-Max	3.3 V	3.3 V

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