Freescale Semiconductor
Technical Data
Document Number: MW6IC1940N--2
Rev. 4.1, 12/2009
RF LDMOS Wideband Integrated
Power Amplifier
The MW6IC1940NB wideband integrated circuit is designed with on--chip
matching that makes it usable from 1920 to 2000 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MW6IC1940NBR1
Final Application
1920-
-2000 MHz, 40 W, 28 V
2 x W-
-CDMA
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
= 200 mA,
I
DQ2
= 440 mA, P
out
= 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth =
RF LDMOS WIDEBAND
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
INTEGRATED POWER AMPLIFIER
Power Gain — 28.5 dB
Power Added Efficiency — 13.5%
IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset —
-
-46
dBc in 3.84 MHz Bandwidth
Driver Applications
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
= 200 mA,
I
DQ2
= 350 mA, P
out
= 26 dBm, Full Frequency Band (1920--2000 MHz),
Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 27 dB
IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset —
-
-62
dBc in 3.84 MHz Bandwidth
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW
CASE 1329-
-09
Output Power
TO-
-272 WB-
-16
•
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW
PLASTIC
P
out
.
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2006--2009. All rights reserved.
MW6IC1940NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
--0.5, +68
--0.5, +6
--65 to +150
150
225
20
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W--CDMA Application
(P
out
= 4.5 W Avg.)
Stage 1, 28 Vdc, I
DQ1
= 200 mA
Stage 2, 28 Vdc, I
DQ2
= 440 mA
Symbol
R
θJC
Value
(2,3)
2.1
1.2
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 1920--2000 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 200 mA, I
DQ2
= 440 mA,
P
out
= 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in
3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
IM3
ACPR
IRL
26
12.5
—
—
—
28.5
13.5
--43
--46
--15
31.5
—
--40
--43
--10
dB
%
dBc
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW6IC1940NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 40 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW
frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands)
Quiescent Current Accuracy over Temperature
with 18 kΩ Gate Feed Resistors (--10 to 85°C)
(1)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Average Deviation from Linear Phase in 30 MHz Bandwidth
@ P
out
= 1 W CW
Average Group Delay @ P
out
= 1 W CW Including Output Matching
Part--to--Part Insertion Phase Variation @ P
out
= 1 W CW,
Six Sigma Window
Symbol
VBW
—
∆I
QT
G
F
Φ
Delay
∆Φ
—
—
—
—
—
30
±5
0.75
±1
2.5
±10
—
—
—
—
—
—
%
dB
°
ns
°
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA, 1920--2000 MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 240 mA, I
DQ2
= 440 mA, 1920--2000 MHz
Saturated Pulsed Output Power
(12
μsec(on),
1% Duty Cycle)
P
sat
—
60
—
W
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW6IC1940NBR1
RF Device Data
Freescale Semiconductor
3
V
D2
V
D1
C1
RF
INPUT
Z1
V
G1
V
G2
R1
R2
Z2
1
2
3 NC
4 NC
5 NC
6
7 NC
8
9
10
11
Quiescent Current
Temperature
Compensation
DUT
16
NC 15
Z9
14
Z3
Z4
C4
C5
Z10
NC 13
12
C11
C3
Z5
C6 Z6
C7
C8
Z7
Z8
C9
C10
C2
RF
OUTPUT
Z1
Z2
Z3
Z4*
Z5*
Z6*
2.20″ x 0.09″ Microstrip
0.13″ x 0.04″ Microstrip
0.17″ x 0.41″ Microstrip
0.20″ x 0.41″ Microstrip
0.11″ x 0.41″ Microstrip
0.06″ x 0.41″ Microstrip
Z7*
Z8*
Z9, Z10
PCB
0.98″ x 0.082″ Microstrip
0.76″ x 0.082″ Microstrip
0.08″ x 0.079″ Microstrip
Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 3. MW6IC1940NBR1 Test Circuit Schematic
Table 6. MW6IC1940NBR1 Test Circuit Component Designations and Values
Part
C1, C2, C3
C4, C5, C6, C7
C8
C9
C10, C11
R1
R2
Description
2.2
μF
Chip Capacitors
0.5 pF Chip Capacitors
1.5 pF Chip Capacitor
0.2 pF Chip Capacitor
10 pF Chip Capacitors
4.7 kΩ, 1/4 W Chip Resistor
3.3 kΩ, 1/4 W Chip Resistor
Part Number
C3225X5R1H225MT
ATC100B0R5BT500XT
ATC100B1R5BT500XT
ATC100B0R2BT500XT
ATC100B100JT500XT
CRCW12064701FKEA
CRCW12063301FKEA
Manufacturer
TDK
ATC
ATC
ATC
ATC
Vishay
Vishay
MW6IC1940NBR1
4
RF Device Data
Freescale Semiconductor
V
D1
C10
MW6IC1940NB Rev. 0
C2
V
D2
CUT OUT AREA
C1
C4 C6
C8
C9
C5
C7
V
G1
R1
R2
V
G2
C11
C3
Figure 4. MW6IC1940NBR1 Test Circuit Component Layout
MW6IC1940NBR1
RF Device Data
Freescale Semiconductor
5
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