MW6IC2015NBR1_08 datasheet, PDF

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MW6IC2015NBR1_08: Description1805 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER; CategoryTopical application Wireless rf/communication; File Size1MB，28 Pages; ManufacturerFREESCALE (NXP)

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MW6IC2015NBR1_08 Overview

1805 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

MW6IC2015NBR1_08 Parametric

Parameter Name	Attribute value
Maximum input power	20 dBm
Minimum operating frequency	1805 MHz
Maximum operating frequency	1990 MHz
Minimum operating temperature	-10 Cel
Maximum operating temperature	85 Cel
Processing package description	ROHS COMPLIANT, PLASTIC, CASE 1329-09, WB-16, TO-272, 16 PIN
each_compli	Yes
EU RoHS regulations	Yes
state	Active
Microwave RF Type	NARROW BAND HIGH POWER
Impedance characteristics	50 ohm
structure	COMPONENT
Gain	24 dB
jesd_609_code	e3
Number of functions	1
Packaging Materials	PLASTIC/EPOXY
ckage_equivalence_code	FLNG,.8''H SPACE
wer_supplies__v_	26
sub_category	RF/Microwave Amplifiers
terminal coating	MATTE TIN
Maximum voltage standing wave ratio	3

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Freescale Semiconductor

Technical Data

Document Number: MW6IC2015N

Rev. 3, 12/2008

The MW6IC2015N wideband integrated circuit is designed for base station

applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS

IC technology and integrates a multi - stage structure. Its wideband on - chip

design makes it usable from 1805 to 1990 MHz. The linearity performances

1805 - 1990 MHz, 15 W, 26 V

cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,

GSM/GSM EDGE, CDMA

TDMA, CDMA, W - CDMA and TD - SCDMA.

RF LDMOS WIDEBAND

Final Application

INTEGRATED POWER AMPLIFIERS

•

Typical Two - Tone Performance: V

= 26 Volts, I

DQ1

= 100 mA, I

DQ2

170 mA, P

out

= 15 Watts PEP, f = 1930 MHz

Power Gain — 26 dB

Power Added Efficiency — 28%

IMD — - 30 dBc

CASE 1329 - 09

Driver Application

TO - 272 WB - 16

•

Typical GSM EDGE Performance: V

= 26 Volts, I

DQ1

= 130 mA, I

DQ2

PLASTIC

170 mA, P

out

= 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or

MW6IC2015NBR1

1930 - 1990 MHz)

Power Gain — 27 dB

Power Added Efficiency — 19%

Spectral Regrowth @ 400 kHz Offset = - 69 dBc

Spectral Regrowth @ 600 kHz Offset = - 78 dBc

EVM — 0.8% rms

CASE 1329A - 04

•

Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW

TO - 272 WB - 16 GULL

Output Power

PLASTIC

•

Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW

MW6IC2015GNBR1

out

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

and Common Source Scattering Parameters

•

On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•

Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

(1)

•

Integrated ESD Protection

•

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•

225°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

RF LDMOS Wideband Integrated

Power Amplifiers

MW6IC2015NBR1

MW6IC2015GNBR1

DS1

out

DS2

GND

DS1

GS1

GS2

GND

out

DS2

GS1

GS2

Quiescent Current

Temperature Compensation

(1)

GND

Figure 1. Functional Block Diagram

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 2. Pin Connections

1. Refer to AN1977,

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

and to AN1987,

Quiescent Current Control

for the RF Integrated Circuit Device Family.

Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.

MW6IC2015NBR1 MW6IC2015GNBR1

RF Device Data

Freescale Semiconductor

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