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MW4IC001MR4_06

Description
RF LDMOS Wideband Integrated Power Amplifier
File Size606KB,16 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet View All

MW4IC001MR4_06 Overview

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MW4IC001MR4
Rev. 4, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Symbol
R
θJC
Value
27.3
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC001MR4
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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