EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS70DW-04-TP-HF

Description
Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size207KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS70DW-04-TP-HF Overview

Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon,

BAS70DW-04-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codecompliant
ECCN codeEAR99
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.07 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAS70TW /DW-04 /
DW-05 /DW-06 /BRW
200mW
SCHOTTKY BARRIER
Diode
SOT-363
G
Features
Fast Switching
Low Forward Voltage Drop
Low Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Maxim um Ratings
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
R
©
JA
P
D
T
STG&
T
J
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current @<1.0s
Thermal Resistance Junction to Ambient
Power dissipation
Storage &Operating JunctionTemperature
Rating
70
70
100
625
200
-55 to +125
Unit
V
mA
mA
/W
mW
K
B
C
A
H
M
J
D
L
NEW PRODUCT
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
I
R
Parameter
Reverse Voltage Leakage
Current
Min
---
Max
100nA
Test Conditions
V
R
=50V
DIM
A
B
C
D
G
H
J
K
L
M
INCHES
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
DIMENSIONS
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
MAX
.014
.053
.096
.055
.087
.004
.043
.018
.006
NOTE
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
---
---
---
---
0.41V
1.0V
2pF
5.0ns
I
F
=1mA
I
F
=15mA
V
R
=0V, f=1MHZ
I
F
=I
R
=10mA,
I
rr
=0.1XI
R
,R
L
=100
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAS70DW-06
Marking: K76
BAS70DW-05
Marking: K71
BAS70DW-04
Marking: K74
BAS70BRW
Marking: K75
BAS70TW
Marking: K73
Revision:
B
www.mccsemi.com
1 of 3
2013/01/01

BAS70DW-04-TP-HF Related Products

BAS70DW-04-TP-HF BAS70TW-TP-HF BAS70BRW-TP-HF BAS70DW-05-TP-HF BAS70DW-06-TP-HF
Description Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon, Rectifier Diode, Schottky, 3 Element, 0.07A, 70V V(RRM), Silicon, Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon, Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon, Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon,
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SEPARATE, 3 ELEMENTS 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Humidity sensitivity level 1 1 1 1 1
Number of components 4 3 4 4 4
Number of terminals 6 6 6 6 6
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 0.07 A 0.07 A 0.07 A 0.07 A 0.07 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V 70 V
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs
surface mount YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 501  2455  1521  1565  378  11  50  31  32  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号