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BAS40DW-05-TP

Description
Rectifier Diode, Schottky, 4 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    diode   
File Size240KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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BAS40DW-05-TP Overview

Rectifier Diode, Schottky, 4 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6

BAS40DW-05-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Configuration2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAS40TW/DW-04/
DW-05 /DW-06 /BRW
200mW
SCHOTTKY BARRIER
Diode
SOT-363
G
Features
Fast Switching
Low Forward Voltage Drop
Low Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
Io
R
©
JA
P
D
T
J
T
STG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
Rating
40
Unit
V
200
mA
/W
625
200
mW
-55 to +125------------
-65 to +125
B
C
A
H
K
J
D
L
M
NEW PRODUCT
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)
Parameter
Reverse breakdown voltage
Reverse Voltage Leakage
Current
40V
---
Min
Max
Test Conditions
DIMENSIONS
INCHES
DIM
A
B
C
D
G
H
J
K
L
M
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
.055
.087
.004
.043
.018
.006
MAX
.014
.053
.096
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
-----
200nA
I
R
= 10
µ
A
V
R
=30V
NOTE
I
R
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
---
---
---
---
0.38V
1.0V
5pF
5.0ns
I
F
=1mA
I
F
=40mA
V
R
=0V, f=1MHZ
I
F
=10mA,I
R
=I
F
=1mA
R
L
=100
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAS40DW-06
Marking: K461
BAS40DW-05
Marking: K45
BAS40DW-04
Marking: K44
BAS40BRW
Marking: K47
BAS40TW
Marking: K43
www.mccsemi.com
Revision:
B
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