TSV912H, TSV912AH
High temperature
rail-to-rail input/output 8 MHz operational amplifiers
Features
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■
■
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Rail-to-rail input and output
Wide bandwidth
Low power consumption: 820 µA typ
Unity gain stability
High output current: 35 mA
Operating range from 2.5 to 5.5 V
Low input bias current, 1 pA typ
ESD internal protection
≥
5 kV
Latch-up immunity
Out1
In1-
In1+
V
CC-
1
2
3
4
Pin connections
(top view)
SO-8
8
_
+
_
+
7
6
5
V
CC+
Out2
In2-
In2+
Applications
■
Automotive products
Description
The TSV912H and TSV912AH operational
amplifiers offer low voltage operation and rail-to-
rail input and output.
The devices feature an excellent speed/power
consumption ratio, offering an 8 MHz gain-
bandwidth product while consuming only 1.1 mA
maximum at 5 V. They are unity gain stable and
feature an ultra-low input bias current.
The TSV912H is a high temperature version of
the TSV912, and can operate from -40°C to
+150°C with unique characteristics. Its main
target applications are automotive, but the device
is also ideal for sensor interfaces, battery-
supplied and portable applications, as well as
active filtering.
July 2010
Doc ID 17688 Rev 1
1/16
www.st.com
16
Absolute maximum ratings and operating conditions
TSV912H, TSV912AH
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC
V
id
V
in
I
in
T
stg
R
thja
R
thjc
T
j
ESD
Absolute maximum ratings
Parameter
Supply voltage
(1)
(V
CC+
- V
CC-
)
Differential input voltage
(2)
Input voltage
(3)
Input current
(4)
Storage temperature
Thermal resistance junction to ambient
(5) (6)
SO-8
Thermal resistance junction to case
(5) (6)
SO-8
Maximum junction temperature
HBM: human body model
(7)
MM: machine model
(8)
CDM: charged device model
(9)
Latch-up immunity
Value
6
±V
CC
V
CC-
-0.2 to V
CC+
+0.2
10
-65 to +150
125
40
160
5
400
1500
200
Unit
V
V
V
mA
°C
°C/W
°C/W
°C
kV
V
V
mA
1. All voltage values, except differential voltage, are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. V
CC
-V
in
must not exceed 6 V.
4. Input current must be limited by a resistor in series with the inputs.
5. Short-circuits can cause excessive heating and destructive dissipation.
6. R
th
are typical values.
7. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
8. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5
Ω).
This is done for all couples of
connected pin combinations while the other pins are floating.
9. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
Table 2.
Symbol
V
CC
V
icm
T
oper
Operating conditions
Parameter
Supply voltage (V
CC+
- V
CC-
)
Common mode input voltage range
Operating free-air temperature range
Value
2.5 to 5.5
V
CC-
-0.1 to V
CC+
+0.1
-40 to +150
Unit
V
V
°C
2/16
Doc ID 17688 Rev 1
TSV912H, TSV912AH
Electrical characteristics
2
Table 3.
Symbol
Electrical characteristics
Electrical characteristics at V
CC+
= +2.5 V with V
CC-
= 0 V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ.
Max.
Unit
DC performance
TSV912H, T=25°C
TSV912H, T
min
< T < T
max
TSV912AH, T=25°C
TSV912AH, T
min
< T < T
max
-40°C < T < +125°C
+125°C < T < +150°C
V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
58
53
80
70
2
20
1
10
(1)
5
10
(1)
5
0.1
4.5
7.5
1.5
3
V
io
Input offset voltage
mV
DV
io
/DT
I
io
Input offset voltage drift
μV/°C
Input offset current
pA
nA
pA
nA
dB
I
ib
Input bias current
1
CMR
0V to 2.5V, V
out
= 1.25V
Common mode rejection ratio
T=25°C
20 log (ΔV
ic
/ΔV
io
)
T
min
< T < T
max
Large signal voltage gain
R
L
= 10kΩ V
out
= 0.5V to 2V
,
T=25°C
T
min
< T < T
max
R
L
= 10kΩ, T=25°C
R
L
= 10kΩ, T
min
< T < T
max
75
A
vd
89
15
40
60
dB
V
CC
-V
OH
High level output voltage
R
L
= 600Ω, T=25°C
R
L
= 600Ω, T
min
< T < T
max
R
L
= 10kΩ, T=25°C
R
L
= 10kΩ, T
min
< T < T
max
V
OL
Low level output voltage
R
L
= 600Ω, T=25°C
R
L
= 600Ω, T
min
< T < T
max
I
sink
I
out
I
source
V
out
= 2.5V
T=25°C
T
min
< T < T
max
V
out
= 0V
T=25°C
T
min
< T < T
max
No load, V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
18
14
18
14
45
150
250
45
15
150
250
40
60
mV
mV
32
mA
35
I
CC
Supply current (per operator)
0.78
1.1
1.1
mA
AC performance
GBP
Gain bandwidth product
R
L
= 2kΩ C
L
=100pF, f =100kHz
,
T=25°C
T
min
< T < T
max
8
4
MHz
Doc ID 17688 Rev 1
3/16
Electrical characteristics
Table 3.
Symbol
F
u
φm
G
m
SR
e
n
THD+e
n
TSV912H, TSV912AH
Electrical characteristics at V
CC+
= +2.5 V with V
CC-
= 0 V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T = 25°C (unless otherwise specified) (continued)
Parameter
Unity gain frequency
Phase margin
Gain margin
Slew rate
Conditions
R
L
= 2kΩ C
L
= 100pF
,
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ, C
L
=100pF, A
v
=1
T=25°C
T
min
< T < T
max
Min.
Typ.
7.2
45
8
4.5
3.5
21
0.001
Max.
Unit
MHz
Degrees
dB
V/μs
nV
-----------
-
Hz
Equivalent input noise voltage f= 10kHz
Total harmonic distortion
G=1, f=1kHz, R
L
=2kΩ, Bw= 22kHz,
V
icm
=(V
CC
+1)/2, V
out
=1.1V
pp
%
1. Guaranteed by design.
Table 4.
Symbol
Electrical characteristics at V
CC+
= +3.3 V with V
CC-
= 0 V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ.
Max.
Unit
DC performance
TSV912H, T=25°C
TSV912H, T
min
< T < T
max
TSV912AH, T=25°C
TSV912AH, T
min
< T < T
max
Input offset voltage drift
-40°C < T < +125°C
+125°C < T < +150°C
V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
60
55
80
70
2
20
1
10
(1)
5
10
(1)
5
0.1
4.5
7.5
mV
1.5
3
μV/°C
V
io
Input offset voltage
DV
io
I
io
Input offset current
pA
nA
pA
nA
dB
I
ib
Input bias current
1
CMR
0V to 3.3V, V
out
= 1.65V
Common mode rejection ratio
T=25°C
20 log (ΔV
ic
/ΔV
io
)
T
min
< T < T
max
Large signal voltage gain
R
L
=10kΩ V
out
= 0.5V to 2.8V
,
T=25°C
T
min
< T < T
max
R
L
= 10kΩ, T=25°C
R
L
= 10kΩ, T
min
< T < T
max
78
A
vd
90
15
40
60
dB
V
CC
-V
OH
High level output voltage
R
L
= 600Ω, T=25°C
R
L
= 600Ω, T
min
< T < T
max
45
150
250
mV
4/16
Doc ID 17688 Rev 1
TSV912H, TSV912AH
Table 4.
Symbol
Electrical characteristics
Electrical characteristics at V
CC+
= +3.3 V with V
CC-
= 0 V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T = 25°C (unless otherwise specified) (continued)
Parameter
Conditions
R
L
= 10kΩ, T=25°C
R
L
= 10kΩ, T
min
< T < T
max
Min.
Typ.
15
Max.
40
60
mV
R
L
= 600Ω, T=25°C
R
L
= 600Ω, T
min
< T < T
max
I
sink
V
out
= 3.3V
T=25°C
T
min
< T < T
max
V
out
= 0V
T=25°C
T
min
< T < T
max
No load, V
out
=V
CC
/2
T=25°C
T
min
< T < T
max
18
14
18
14
45
150
250
Unit
V
OL
Low level output voltage
32
mA
35
I
out
I
source
I
CC
Supply current (per operator)
0.8
1.1
1.1
mA
AC performance
GBP
F
u
φm
G
m
SR
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
Slew rate
R
L
= 2kΩ C
L
= 100pF, f = 100kHz,
,
T=25°C
T
min
< T < T
max
R
L
= 2kΩ, C
L
=100pF
R
L
= 2kΩ C
L
=100pF
,
R
L
= 2kΩ C
L
=100pF
,
R
L
= 2kΩ C
L
= 100pF, A
v
=1,
,
T=25°C
T
min
< T < T
max
8
4.2
7.2
45
8
4.5
3.5
21
0.0007
MHz
MHz
Degrees
dB
V/μs
nV
-----------
-
Hz
e
n
Equivalent input noise voltage f= 10kHz
G=1, f=1kHz, R
L
=2kΩ, BW= 22kHz,
V
icm
=(V
CC
+1)/2, V
out
=1.9V
pp
,
THD+e
n
Total harmonic distortion
1. Guaranteed by design.
%
Doc ID 17688 Rev 1
5/16