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T599F13TKL

Description
Silicon Controlled Rectifier, 1500A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size75KB,6 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T599F13TKL Overview

Silicon Controlled Rectifier, 1500A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 1 Element,

T599F13TKL Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current250 mA
JESD-30 codeO-CEDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1500 A
Off-state repetitive peak voltage1300 V
Repeated peak reverse voltage1300 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationEND
Trigger device typeSCR
Technische Information / Technical Information
Schneller Thyristor
Fast Thyristor
T 599 F 12...13
T
vj
= - 40°C...T
vj max
F
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak foward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMSM on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85 °C
T
C
= 47 °C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
DIN IEC 747-6
f=50 Hz, i
GM
= 1 A
di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5. Kennbuchstabe / 5th letter B
5. Kennbuchstabe / 5th letter C
5. Kennbuchstabe / 5th letter L
5. Kennbuchstabe / 5th letter M
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRSMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
1200
1300
1200
1300
1300
1400
1500
599
960
11.300
10.000
638
500
200
V
V
V
V
V
V
A
A
A
A
A
A²s*10
3
A²s*10
3
A/µs
T
vj
= - 40°C...T
vj max
T
vj
= + 25°C...T
vj max
(dv
D
/dt)
cr
1)
50
500
500
1000
2)
50
500
50
500
V/µs
V/µs
V/µs
V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündener Steuerstrom
gate non-trigger current
Nicht zündene Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 1000 A
v
T
V
T(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max. 1,66
1,15
0,42
max. 250
max. 2,2
max. 10
max. 5
max. 0,25
max. 250
max. 1000
V
V
mΩ
mA
V
mA
mA
V
mA
mA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
=12 V
T
vj
= 25°C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12 V, R
A
= 10
T
vj
= 25°C, v
D
= 12 V, R
GK
>= 10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C
i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
max. 100
max. 1,5
mA
µs
1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung). / Values to DIN IEC 747-6 (without prior commutation).
2) Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für t
q
./ Immediately after circuit commutated turn-off-time,
see parameters t
q
.
SZ-M / 12.10.98 , K.-A. Rüther
A 117 / 98
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