TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 600 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMBJ5.0A thru MSMBJ170CA, e3
and MSMBG5.0A thru MSMBG170CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL. These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options.
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to
MP6KE200CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
Refer to table below
for dimensions
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching transients & induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB120CA
o
Class 2: MSMB5.0A to MSMB60CA
o
Class 3: MSMB5.0A to MSMB30CA
o
Class 4: MSMB5.0A to MSMB15CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB36CA
o
Class 2: MSMB5.0A to MSMB18CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000
μs
(also see Figures 1, 2, and
3) with impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 °C to +150 °C
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when
mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01000 Rev B, Sept 2011
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating
solderable per MIL-STD-750, method 2026
Cathode indicated by band (No cathode band on bi-directional devices)
Part number marked on package
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL option available with up to 750 devices on 7 inch reel or up to 2500 devices on 13 inch reel per
EIA-481-1-A with 12 mm tape. Add “TR” suffix to part number.
Weight: 0.1 gram (approximately)
PACKAGE DIMENSIONS
MIN
MAX
A
.077
.083
1.95
2.10
B
.160
.180
DIMENSIONS IN INCHES
C
D
E
F
.130 .205
.077
.235
.155 .220
.104
.255
K
.015
.030
.381
.762
L
.030
.060
.760
1.520
MIN
MAX
SMBJ
(DO-214AA)
SMBG
(DO-215AA)
DIMENSIONS IN MILLIMETERS
4.06
3.30 5.21
1.95
5.97
4.57
3.94 5.59
2.65
6.48
PAD LAYOUT
SMBJ (DO-214AA)
A
B
C
INCHES
.260
.085
.110
mm
6.60
2.16
2.79
SMBG (DO-215AA)
A
B
C
INCHES
.320
.085
.110
mm
8.13
2.16
2.79
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01000 Rev B, Sept 2011
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
REVERSE
STAND-OFF
VOLTAGE
V
WM
BREAKDOWN VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ I
PP
PEAK PULSE
CURRENT
(see Fig. 2)
I
PP
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
MICROSEMI PART NUMBER
V
BR
@ I
BR
V
6.40 – 7.00
6.67 – 7.37
7.22 – 7.98
7.78 – 8.60
8.33 – 9.21
8.89 – 9.83
9.44 – 10.4
10.0 – 11.1
11.1 – 12.3
12.2 – 13.5
13.3 – 14.7
14.4 – 15.9
15.6 – 17.2
16.7 – 18.5
17.8 – 19.7
18.9 – 20.9
20.0 – 22.1
22.2 – 24.5
24.4 – 26.9
26.7 – 29.5
28.9 – 31.9
31.1 – 34.4
33.3 – 36.8
36.7 – 40.6
40.0 – 44.2
44.4 – 49.1
47.8 – 52.8
50.0 – 55.3
53.3 – 58.9
56.7 – 62.7
60.0 – 66.3
64.4 – 71.2
66.7 – 73.7
71.1 – 78.6
77.8 – 86.0
83.3 – 92.1
86.7 – 95.8
94.4 – 104
100 – 111
111 – 123
122 – 135
133 – 147
144 – 159
167 – 185
178 – 197
189 – 209
mA
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
GULL-WING
MSMBG5.0A
MSMBG6.0A
MSMBG6.5A
MSMBG7.0A
MSMBG7.5A
MSMBG8.0A
MSMBG8.5A
MSMBG9.0A
MSMBG10A
MSMBG11A
MSMBG12A
MSMBG13A
MSMBG14A
MSMBG15A
MSMBG16A
MSMBG17A
MSMBG18A
MSMBG20A
MSMBG22A
MSMBG24A
MSMBG26A
MSMBG28A
MSMBG30A
MSMBG33A
MSMBG36A
MSMBG40A
MSMBG43A
MSMBG45A
MSMBG48A
MSMBG51A
MSMBG54A
MSMBG58A
MSMBG60A
MSMBG64A
MSMBG70A
MSMBG75A
MSMBG78A
MSMBG85A
MSMBG90A
MSMBG100A
MSMBG110A
MSMBG120A
MSMBG130A
MSMBG150A
MSMBG160A
MSMBG170A
NOTE 1:
NOTE 2:
J-BEND
MSMBJ5.0A
MSMBJ6.0A
MSMBJ6.5A
MSMBJ7.0A
MSMBJ7.5A
MSMBJ8.0A
MSMBJ8.5A
MSMBJ9.0A
MSMBJ10A
MSMBJ11A
MSMBJ12A
MSMBJ13A
MSMBJ14A
MSMBJ15A
MSMBJ16A
MSMBJ17A
MSMBJ18A
MSMBJ20A
MSMBJ22A
MSMBJ24A
MSMBJ26A
MSMBJ28A
MSMBJ30A
MSMBJ33A
MSMBJ36A
MSMBJ40A
MSMBJ43A
MSMBJ45A
MSMBJ48A
MSMBJ51A
MSMBJ54A
MSMBJ58A
MSMBJ60A
MSMBJ64A
MSMBJ70A
MSMBJ75A
MSMBJ78A
MSMBJ85A
MSMBJ90A
MSMBJ100A
MSMBJ110A
MSMBJ120A
MSMBJ130A
MSMBJ150A
MSMBJ160A
MSMBJ170A
V
5
6
6.5
7
7.5
8
8.5
9
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
V
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
A
65.2
58.3
53.6
50
46.5
44.1
41.7
39
35.3
33
30.2
27.9
25.8
24
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.7
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
µA
800
800
500
200
100
50
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
For Bidirectional device types indicate CA suffix after the part number. (i.e. MSMBJ170CA). Bidirectional capacitance
is half that shown in figure 4 at zero volts.
Microsemi Corp’s MSMB series (600 W) surface mountable packages are designed specifically for transient voltage
suppression. The wide leads assure a large surface contact for good heat dissipation, and a low resistance path for
surge current flow to ground. These high speed transient voltage suppressors can be used to effectively protect
sensitive components such as integrated circuits and MOS devices
RF01000 Rev B, Sept 2011
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS
50
30
20
P
PP
– Peak Pulse Power – kW
T
C
= 25 °C
10
2.0
1.0
0.5
0.3
0.2
0.1
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50 100
200
1000
10,000
tw – Pulse Width -
μs
FIGURE 1
Peak Pulse Power vs. Pulse Time
Test waveform parameters: tr=10
μs,
tw=1000
μs
FIGURE 2
Pulse Waveform for Exponential Surge
Peak Pulse Power (
P
PP
) or continuous
Power in Percent of 25°C Rating
T
L
Lead Temperature °C
FIGURE 3
Derating Curve
C – Capacitance - Picofarads
V
BR
Breakdown Voltage – Volts
FIGURE 4
Typical Capacitance vs Breakdown Voltage
RF01000 Rev B, Sept 2011
High Reliability Product Group
Page 4 of 4
Microcontroller MCU
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