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JANTX1N5444B

Description
Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Abrupt, DO-7,
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

JANTX1N5444B Overview

Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Abrupt, DO-7,

JANTX1N5444B Parametric

Parameter NameAttribute value
MakerMACOM
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.8
Nominal diode capacitance12 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor550
GuidelineMIL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
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