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TN3512LTA

Description
Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

TN3512LTA Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

TN3512LTA Parametric

Parameter NameAttribute value
MakerVishay
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-226AA
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
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