BU706D datasheet, PDF - EEWORLD Datasheet

BU706D: DescriptionTRANSISTOR 5 A, 700 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size101KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BU706D Overview

TRANSISTOR 5 A, 700 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	FORMED LEAD OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	700 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	6
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	100 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1 V

	BU706D	BU706
Description	TRANSISTOR 5 A, 700 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	5A, 700V, NPN, Si, POWER TRANSISTOR
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
Other features	FORMED LEAD OPTIONS ARE AVAILABLE	FORMED LEAD OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	5 A	5 A
Collector-emitter maximum voltage	700 V	700 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE
Minimum DC current gain (hFE)	6	6
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	100 W	100 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	1 V	1 V

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