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BU706DF

Description
Bipolar Transistors;NPN;5A;700V;TO-3PML
File Size214KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BU706DF Overview

Bipolar Transistors;NPN;5A;700V;TO-3PML

BU706DF Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V(Min)
·High
Switching Speed
·Built-in
Integrated Diode
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in horizontal deflection circuits of color TV
receivers and line operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
J
T
stg
PARAMETER
Collector- Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
6
5
8
3
5
32
150
-65~150
UNIT
V
V
V
A
A
A
A
W
BU706DF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Rth j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
3.95
35
UNIT
℃/W
℃/W
isc website
www.iscsemi.com
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