BUZ902P datasheet, PDF - EEWORLD Datasheet

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BUZ902P: Description8A, 220V, N-CHANNEL, Si, POWER, MOSFET, TO-247; CategoryDiscrete semiconductor The transistor; File Size24KB，2 Pages; ManufacturerSEMELAB

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BUZ902P Overview

8A, 220V, N-CHANNEL, Si, POWER, MOSFET, TO-247

BUZ902P Parametric

Parameter Name	Attribute value
Maker	SEMELAB
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	220 V
Maximum drain current (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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MAGNA

TEC

4.69

5.31

1.49

2.49

(0.185)

(0.209)

(0.059)

(0.098)

15.49 (0.610)

16.26 (0.640)

BUZ902P

BUZ903P

MECHANICAL DATA

Dimensions in mm

N–CHANNEL

POWER MOSFET

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

20.80 (0.819)

21.46 (0.845)

6.15

(0.242)

BSC

4.50

(0.177)

Max.

1

2

3

1.65 (0.065)

2.13 (0.084)

2.87 (0.113)

3.12 (0.123)

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY P–CHANNEL

BUZ907P & BUZ908P

0.40 (0.016)

0.79 (0.031)

19.81 (0.780)

20.32 (0.800)

1.01 (0.040)

1.40 (0.055)

2.21 (0.087)

2.59 (0.102)

5.25 ( 0.215)

BSC

TO-247

Pin 1 – Gate

Pin 2 – Source

Case – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

DSX

Drain – Source Voltage

V

GSS

I

D

I

D(PK)

P

D

T

stg

T

j

R

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

BUZ902P

220V

±14V

8A

125W

–55 to 150°C

150°C

1°C/W

BUZ903P

250V

Magnatec.

Telephone (01455) 554711. Fax (01455) 558843

Prelim. 01/97

BUZ902P Related Products

	BUZ902P	BUZ903P
Description	8A, 220V, N-CHANNEL, Si, POWER, MOSFET, TO-247	8A, 250V, N-CHANNEL, Si, POWER, MOSFET, TO-247
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	220 V	250 V
Maximum drain current (ID)	8 A	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247	TO-247
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A	8 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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