EEWORLDEEWORLDEEWORLD

Part Number

Search

BC328-AP

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size336KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BC328-AP Overview

Transistor,

BC328-AP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codecompliant
JESD-609 codee3
Terminal surfaceMatte Tin (Sn)
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC327-16/25/40
BC328-16/25/40
PNP
Plastic-Encapsulate
Transistors
TO-92
A
E
Features
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8A
Collector-base Voltage :V
CBO
=-50V(BC327) , V
CBO
=-30V(BC328)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL rating 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Operating temperature : -55 to +150
Storage temperature : -55 to +150
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
---
-45
-25
---
-50
-30
-5.0
Vdc
Units
Vdc
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
BC327
BC328
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
BC327
BC328
Collector-Emitter Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-45Vdc,I
E
=0)
BC327
(V
CB
=-25Vdc,I
E
=0)
BC328
Collector Cutoff Current
BC327
(V
CE
=-40Vdc,I
B
=0)
(V
CE
=-20Vdc,I
B
=0)
BC328
Emitter Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
DC Current Gain
(I
C
=-300mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
(I
C
=-500mAdc,I
B
=-50mAdc)
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
Classification
h
FE(1)
Marking Code
16
100~250
A 011
B
V
(BR)CBO
V
(BR)EBO
I
CBO
---
Vdc
µAdc
C
---
---
---
---
---
-0.1
-0.1
µAdc
-0.2
-0.2
-0.1
I
CEO
I
EBO
µAdc
1
2
3
D
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
100
40
---
---
630
---
-0.7
-1.2
---
---
Vdc
Vdc
1.COLLECTOR
2.BASE
3.EMITTER
G
SMALL SIGNAL CHARACTERISTICS
f
T
260
---
MHz
INCHES
MIN
.170
.170
.550
.010
.130
.010
DIMENSIONS
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
hFE CLASSIFICATION
25
160~400
B 011
40
250~630
C 011
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision:
6
www.mccsemi.com
1 of 3
2008/08/27

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1070  977  387  2030  1651  22  20  8  41  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号