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BU941T

Description
15A, 400V, NPN, Si, POWER TRANSISTOR, TO-3, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size213KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
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BU941T Overview

15A, 400V, NPN, Si, POWER TRANSISTOR, TO-3, TO-220, 3 PIN

BU941T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-3-3L
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage400 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment180 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max2 V
BU941T/BU941TFI
BU941SM
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON
PRELIMINARY DATA
s
s
s
s
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATING JUNCTION
TEMPERATURE
WIDE RANGE OF PACKAGES
POWER PACKAGE SPECIFICALLY
DESIGNED FOR SURFACE MOUNTING
(Power SO-10 )
1
2
3
1
2
3
APPLICATIONS
s
HIGH RUGGEDNESS ELECTRONIC
IGNITIONS
TO-220
ISOWATT220
10
1
Power SO-10
INTERNAL SCHEMATIC DIAGRAM
for
Power S O-10
Emitter: pins 1 - 5
Base: pins 6 - 10
Collector: tab
ABSOLUTE MAXIMUM RATINGS
Symbol
V
C ES
V
CEO
V
EBO
I
C
I
CM
I
B
I
B M
P
tot
T
stg
T
j
Parameter
BU941T
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BU941TFI
500
400
5
15
30
1
5
150
-65 to 175
175
55
-65 to 175
175
150
-65 to 175
175
BU941SM
Unit
V
V
V
A
A
A
A
W
o
o
C
C
1/8
Dicember 1993

BU941T Related Products

BU941T BU941TFI
Description 15A, 400V, NPN, Si, POWER TRANSISTOR, TO-3, TO-220, 3 PIN 15A, 400V, NPN, Si, POWER TRANSISTOR
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant
Shell connection COLLECTOR ISOLATED
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 400 V 400 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 300 300
JESD-30 code O-MBFM-P2 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 200 °C 175 °C
Package body material METAL PLASTIC/EPOXY
Package shape ROUND RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power consumption environment 180 W 55 W
Maximum power dissipation(Abs) 150 W 55 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form PIN/PEG THROUGH-HOLE
Terminal location BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
VCEsat-Max 2 V 1.8 V
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