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5962-8685914UA

Description
Standard SRAM, 16KX4, 55ns, CMOS, CQCC28, CERAMIC, LCC-28
Categorystorage    storage   
File Size156KB,11 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

5962-8685914UA Overview

Standard SRAM, 16KX4, 55ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-8685914UA Parametric

Parameter NameAttribute value
MakerMicross
package instructionQCCN,
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time55 ns
JESD-30 codeR-CQCC-N28
length13.97 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals28
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height1.905 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width8.89 mm
SRAM
MT5C6405
16K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• MIL-STD-883
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\
OE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A4
A3
A2
A1
A0
NC
DQ4
DQ3
DQ2
DQ1
WE\
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
28-Pin LCC (EC)
A5
NC
NC
Vcc
NC
3 2 1 28 27
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil) C
Ceramic LCC
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
A6 4
A7 5
A8 6
A9 7
A10 8
A11 9
A12 10
A13 11
CE\ 12
26
25
24
23
22
21
20
19
18
NC
A4
A3
A2
A1
A0
DQ4
DQ3
DQ2
13 14 15 16 17
DQ1
WE\
NC
Vss
OE\
No. 106
EC
No. 204
GENERAL DESCRIPTION
The Micross Components SRAM family employs high-
speed, low-power CMOS designs using a four-transistor mem-
ory cell. Austin Semiconductor SRAMs are fabricated using
double-layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Micross
Components offers chip enable (CE\) and output enable (OE\)
capability. These enhancements can place the outputs in High-Z
for additional flexibility in system design.
Writing to these devices is accomplished when write enable
(WE\) and CE\ inputs are both LOW. Reading is accomplished
when WE\ remains HIGH and CE\ and OE\ go LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power
requirements.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 35ns ac-
cess devices.
For more products and information
please visit our web site at
www.miross.com
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
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