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DH71030-51T10

Description
Variable Capacitance Diode, 3pF C(T),
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerRakon Limited
Download Datasheet Parametric View All

DH71030-51T10 Overview

Variable Capacitance Diode, 3pF C(T),

DH71030-51T10 Parametric

Parameter NameAttribute value
MakerRakon Limited
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal diode capacitance3 pF
Diode typeVARIABLE CAPACITANCE DIODE
minimum quality factor3400
Maximum repetitive peak reverse voltage30 V
surface mountYES
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE:
Variation of the junction capacitance versus reverse voltage follows this equation:
C
j
(V
r
)
=
C
j
(0 V)
1 + V
r
φ
[
]
γ
V
r
:
φ
:
γ
:
Reverse voltage
Built-in potential .7V for Si
.5 for abrupt tuning varactor
12-32
Vol. 1
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