Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x61
I
FAVM
= 2x71 A
V
RRM
= 200 V
t
rr
= 35 ns
V
RSM
V
200
V
RRM
V
200
Type
DSEI 2x 61-02P
D5
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 25°C V
R
= 0.8 • V
RRM
T
VJ
= 125°C V
R
= 0.8 • V
RRM
I
F
= 60 A;
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque (M4)
t = 1 min
t=1s
Conditions
Maximum Ratings (per diode)
100
71
800
950
-40...+150
150
-40...+150
150
2500
3000
1.5 - 2.0
14 - 18
18
A
A
A
A
°C
°C
°C
W
V~
V~
Nm
lb.in.
g
Features
•
•
•
•
•
•
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
T
VJ
= T
VJM
T
C
= 85°C; rectangular; d = 0.5
t
P
< 10 µs; rep. rating; pulse width limited by T
VJM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
Characteristic Values (per diode)
typ.
max.
50
40
11
0.88
1.08
0.7
3.0
0.8
0.05
µA
µA
mA
V
V
V
mΩ
K/W
K/W
ns
A
mm
mm
m/s²
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
d
S
d
A
a
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 200 A/µs
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 60 A; -di
F
/dt = 200 A/µs
T
VJ
= 100°C
Creeping distance on surface
Creeping distance in air
Allowable acceleration
35
8
50
10
min. 11.2
min. 11.2
max. 50
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
20080125a
© 2008 IXYS All rights reserved
1-2
DSEI 2x 61-12P
160
A
140
Q
r
I
F
120
100
80
T
VJ
=150°C
0.8
μC
0.6
T
VJ
= 100°C
V
R
= 100V
30
T
VJ
= 100°C
A
V = 100V
R
25
I
RM
I
F
= 35A
I
F
= 70A
I
F
=140A
20
15
10
I
F
= 35A
I
F
= 70A
I
F
=140A
0.4
60
T
VJ
=100°C
40
20
T
VJ
=25°C
0.2
5
0.0
10
0
100
A/μs 1000
-di
F
/dt
0
200
400
600 A/μs 1000
800
-di
F
/dt
0
0.0
0.4
0.8
V
F
1.2 V
D5
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
70
ns
60
t
rr
50
40
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
5
T
VJ
= 100°C
I
F
= 100A
1.6
1.4
K
f
1.2
1.0
0.8
0.6
0.4
0.2
0
40
80
120 °C 160
T
VJ
Q
r
I
RM
2.5
μs
2.0
t
fr
T
VJ
= 100°C
V
R
= 100V
V
V
FR
4
t
fr
V
FR
3
I
F
=35A
I
F
=70A
I
F
=140A
1.5
30
20
2
1.0
1
10
0
0
200
400
600 A/μs
800
-di
F
/dt
1000
0
0
200
400
600
di
F
/dt
0.5
0.0
800
A/μs
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and t
fr
versus di
F
/dt
Dimensions
Z
thJC
0.1
Constants for
Z
thJC
calculation:
R
thi
/ (K/W) t
i
/ (s)
0.1000
0.3400
0.3600
0.00014
0.00600
0.16500
DSEI 2x61-02
0.01
0.0001
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal impedance junction to case
20080125a
© 2008 IXYS All rights reserved
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