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GS8182D08GBD-200IT

Description
DDR SRAM, 2MX8, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
Categorystorage    storage   
File Size1MB,37 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8182D08GBD-200IT Overview

DDR SRAM, 2MX8, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

GS8182D08GBD-200IT Parametric

Parameter NameAttribute value
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.B
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length15 mm
memory density16777216 bit
Memory IC TypeDDR SRAM
memory width8
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
Preliminary
GS8182D08/09/18/36BD-400/375/333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb and future 36Mb and
144Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
18Mb SigmaQuad-II
Burst of 4 SRAM
400 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Because Separate I/O SigmaQuad-II B4 RAMs always transfer
data in four packets, A0 and A1 are internally set to 0 for the
first read or write transfer, and automatically incremented by 1
for the next transfers. Because the LSBs are tied off internally,
the address field of a SigmaQuad-II B4 RAM is always two
address pins less than the advertised index depth (e.g., the 1M
x 18 has a 256K addressable index).
SigmaQuad™ Family Overview
The GS8182D08/09/18/36BD are built in compliance with
the SigmaQuad-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 18,874,368-bit (18Mb)
SRAMs. The GS8182D08/09/18/36BD SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8182D08/09/18/36BD SigmaQuad-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
.
- 400
tKHKH
tKHQV
2.5 ns
0.45 ns
- 375
2.67 ns
0.45 ns
Parameter Synopsis
- 333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.50 ns
Rev: 1.02 9/2008
1/37
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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