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M368L3324CUS-CB0

Description
DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184
Categorystorage    storage   
File Size446KB,25 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
Download Datasheet Parametric View All

M368L3324CUS-CB0 Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184

M368L3324CUS-CB0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum slew rate1.38 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
256MB, 512MB, 1GB Unbuffered DIMM
Preliminary
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 512Mb C-die
with 64/72-bit ECC/Non ECC
66 TSOP-II with Pb-Free
(RoHS compliant)
Revision 0.1
August. 2004
Rev. 0.1 August. 2004

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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