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2SC3969B

Description
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size119KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC3969B Overview

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN

2SC3969B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220FP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Other featuresHIGH VOLTAGE
Shell connectionISOLATED
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
Transistors
High Voltage Switching Transistor
(400V, 2A)
2SC3969 / 2SC5161
FFeatures
1) Low V
CE(sat)
.
V
CE(sat)
= 0.15V (Typ.)
(I
C
/ I
B
= 1A / 0.2A)
2) High breakdown voltage.
V
CEO
= 400V
3) Fast switching.
t
r
= 1.0µs
(I
C
= 0.8A)
FStructure
Three-layer, diffused planar type
NPN silicon transistor
FExternal
dimensions (Units: mm)
(96-698-C14)
236

2SC3969B Related Products

2SC3969B 2SC3969/B
Description Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN 2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220FP, TO-220FP, 3 PIN
Is it Rohs certified? conform to conform to
Parts packaging code TO-220FP TO-220FP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1

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