FBR5000 - FBR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at I
F
= 25 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
FBR
5000
50
35
50
FBR
5001
100
70
100
FBR
5002
200
140
200
FBR
5004
400
280
400
50
400
664
1.3
10
1.0
FBR
5006
600
420
600
FBR
5008
800
560
800
FBR
5010
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
T
rr
RθJC
T
J
T
STG
µ
A
mA
300
500
ns
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
200
1
- 50 to + 150
- 50 to + 150
°
C/W
°
C
°
C
Notes :
1 ) Measured with I
F
= 0.5 Amp., I
R
= 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR5000 - FBR5010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5
D.U.T.
50 Vdc
(approx)
1
Ω
OSCILLOSCOPE
( NOTE 1 )
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
Trr
+
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
50
500
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
Tc = 55
°C
400
40
30
300
20
200
10
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
100
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
NUMBER OF CYCLES AT 60Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
10
1.0
1.0
0.1
T
J
= 25
°C
Pulse Width = 300
µs
2% Duty Cycle
0.1
T
J
= 25
°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
MCU
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