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FR501_05

Description
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Compare View All

FR501_05 Overview

5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

FR501 - FR507
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Half-Wave Resistive Load
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 5 A
Maximum DC Reverse Current at V
RRM
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
Ta = 75
°C
SYMBOL
FR501
FR502
FR503
FR504
FR505
FR506
FR507
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
5.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
Trr
300
1.3
10
150
- 65 to + 150
- 65 to + 150
250
500
A
V
µA
ns
°C
°C
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
Page 1 of 2
Rev. 02 : March 25, 2005

FR501_05 Related Products

FR501_05 FR501 FR502 FR503 FR504 FR505 FR506 FR507
Description 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it lead-free? - Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to conform to
Maker - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code - compli compli compli compli compli compli compli
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current - 300 A 300 A 300 A 300 A 300 A 300 A 300 A
Number of components - 1 1 1 1 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current - 5 A 5 A 5 A 5 A 5 A 5 A 5 A
Maximum repetitive peak reverse voltage - 50 V 100 V 200 V 400 V 600 V 800 V 1000 V
Maximum reverse recovery time - 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.5 µs 0.5 µs
surface mount - NO NO NO NO NO NO NO
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