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M5M41000BRV-8

Description
Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20, 6 X 16 MM, PLASTIC, TSOP1-24/20
Categorystorage    storage   
File Size499KB,16 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M41000BRV-8 Overview

Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20, 6 X 16 MM, PLASTIC, TSOP1-24/20

M5M41000BRV-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeTSOP
package instructionTSOP1-R, TSSOP20/24,.63,20
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDSO-G20
JESD-609 codee0
length14.4 mm
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1-R
Encapsulate equivalent codeTSSOP20/24,.63,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
reverse pinoutYES
Maximum seat height1.2 mm
Maximum standby current0.0005 A
Maximum slew rate0.07 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
This Material Copyrighted By Its Respective Manufacturer

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