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GF1B

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size101KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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GF1B Overview

SIGNAL DIODE

GF1B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionSMA, 2 PIN
Reach Compliance Codecompli
Is SamacsysN
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time2 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GF1A - GF1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1
±
0.3
5.0
±
0.15
4.5
±
0.15
1.2
±
0.2
2.6
±
0.15
2.1
±
0.2
0.2
±
0.07
2.0
±
0.2
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.067 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
GF1A GF1B GF1D GF1G GF1J GF1K GF1M
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.0
5.0
50
2.0
8
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
μA
μs
pF
°C
°C
Typical Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
C
J
T
J
T
STG
- 65 to + 150
- 65 to + 150
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 03 : October 14, 2005

GF1B Related Products

GF1B GF1A GF1D GF1G GF1J GF1K GF1M
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, SILICON, SIGNAL DIODE, DO-214BA 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, SILICON, SIGNAL DIODE, DO-214BA 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code compli compli compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 400 V 600 V 800 V 1000 V
Maximum reverse recovery time 2 µs 2 µs 2 µs 2 µs 2 µs 2 µs 2 µs
surface mount YES YES YES YES YES YES YES
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors]
Is Samacsys N N N N N N -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.2 V -
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A -
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