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HUF76139P3, HUF76139S3S
Data Sheet
January 2003
75A, 30V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76139.
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, r
DS(ON)
= 0.0075Ω
• Temperature Compensating PSPICE
®
Model
• Temperature Compensating SABER
©
Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HUF76139P3
HUF76139S3S
PACKAGE
TO-220AB
TO-263AB
BRAND
76139P
76139S
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76139S3ST.
S
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
HUF76139P3, HUF76139S3S3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
30
30
±20
75
64
61
Figure 4
Figures 6, 17, 18
165
1.35
-40 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
V
V
V
A
A
A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
=64A, V
GS
= 5V (Figure 9)
I
D
= 61A, V
GS
= 4.5V (Figure 9,)
1
-
-
-
-
0.0065
0.0082
0.009
3
0.0075
0.010
0.011
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
61A,
R
L
= 0.246Ω, V
GS
=
4.5V,
R
GS
= 4.5Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
20
150
30
40
-
255
-
-
-
-
105
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-220AB, TO-263AB
-
-
-
-
0.74
62
o
C/W
o
C/W
©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
HUF76139P3, HUF76139S3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
2700
1100
200
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
≅
64A,
R
L
= 0.234Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
-
7.60
18.40
-
-
nC
nC
-
-
-
65
38
2.5
78
46
3
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A
R
L
= 0.200Ω, V
GS
=
10V,
R
GS
= 10Ω
(Figures 16, 21, 22)
-
-
-
-
-
-
-
16
65
90
55
-
120
-
-
-
-
218
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 75A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
85
160
UNITS
V
ns
nC
Typical Performance Curves
80
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
60
V
GS
= 4.5V
40
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASESC TEMPERATURE (
o
C)
20
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
HUF76139P3, HUF76139S3S
Typical Performance Curves
(Continued)
2
1
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
I
DM
, PEAK CURRENT (A)
1000
V
GS
= 10V
V
GS
= 5V
CURRENT AS FOLLOWS:
I
=
I
25
175 - T
C
150
100
50
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
1000
2000
1000
I
D
, DRAIN CURRENT (A)
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100µs
100
1ms
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
STARTING T
J
= 25
o
C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10ms
10
0.001
100
STARTING T
J
= 150
o
C
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
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