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HVR112

Description
HIGH VOLTAGE
CategoryDiscrete semiconductor    diode   
File Size29KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

HVR112 Overview

HIGH VOLTAGE

HVR112 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum output current1 A
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Base Number Matches1
HVR112 - HVR120
PRV : 1200 - 2000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
HIGH VOLTAGE
RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Ta = 75°C
SYMBOL HVR112 HVR114 HVR116 HVR118 HVR120
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Cj
R
θ
JA
T
J
T
STG
1200
840
1200
1400
980
1400
1600
1120
1600
1.0
30
2.2
5.0
100
36
26
- 40 to + 150
- 40 to + 150
1800
1260
1800
2000
1400
2000
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25°C
Ta = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 24, 2005

HVR112 Related Products

HVR112 HVR120 HVR114 HVR112_05 HVR116 HVR118
Description HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE
Is it lead-free? Lead free Lead free Lead free - Lead free Lead free
Is it Rohs certified? conform to conform to conform to - conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli - compli compli
Is Samacsys N N N - N N
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V 1.5 V - 1.5 V 1.5 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A - 30 A 30 A
Number of components 1 1 1 - 1 1
Maximum output current 1 A 1 A 1 A - 1 A 1 A
Maximum repetitive peak reverse voltage 1200 V 2000 V 1400 V - 1600 V 1800 V
surface mount NO NO NO - NO NO
Base Number Matches 1 1 1 - 1 1

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