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1N4246

Description
1 A, SILICON, SIGNAL DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size94KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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1N4246 Overview

1 A, SILICON, SIGNAL DIODE, DO-204AP

1N4246 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4245 - 1N4249
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High forward surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
M1A
0.085(2.16)
0.075(1.91)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100
μA
Maximum Average Forward Current at Ta = 55 °C
Peak Forward Surge Current
8.3 ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 3.0 A
Maximum Reverse Current
at V
RWM
, Ta = 25 °C
at V
RWM
, Ta = 150 °C
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249
V
RWM
V
BR(MIN)
I
F(AV)
I
FSM
200
240
400
480
600
720
1.0
800
960
1000
1150
UNIT
V
V
A
25
A
V
F
I
R
I
R(H)
Trr
R
ӨJL
T
J
, T
STG
1.3
1.0
150
5.0
42
-65 to +175
V
μA
μs
°C/W
°C
Notes :
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
RM
= 1.0 A, I
R(REC)
= 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
Page 1 of 1
Rev. 03 : November 2, 2006

1N4246 Related Products

1N4246 1N4245 1N4247 1N4249 1N4248
Description 1 A, SILICON, SIGNAL DIODE, DO-204AP 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, 800 V, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 400 V 200 V 600 V 1000 V 800 V
Maximum reverse recovery time 5 µs 5 µs 5 µs 5 µs 5 µs
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] -
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