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M485L6523CU0-CA2

Description
DDR DRAM Module, 64MX72, 0.75ns, CMOS, SODIMM-200
Categorystorage    storage   
File Size402KB,25 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
Download Datasheet Parametric View All

M485L6523CU0-CA2 Overview

DDR DRAM Module, 64MX72, 0.75ns, CMOS, SODIMM-200

M485L6523CU0-CA2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeMODULE
package instructionDIMM, DIMM200,24
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N200
memory density4831838208 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM200,24
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.05 A
Maximum slew rate2.93 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.6 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
256MB, 512MB, 1GB Unbuffered SODIMM
Preliminary
DDR SDRAM
DDR SDRAM Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512Mb C-die
with 64/72-bit ECC/Non ECC
66 TSOP-II with Pb-Free
(RoHS compliant)
Revision 0.2
October. 2004
Rev. 0.2 October. 2004
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